FXN0703D Todos los transistores

 

FXN0703D MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FXN0703D
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 55 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 58 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 8.5 nS
   Cossⓘ - Capacitancia de salida: 180 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.007 Ohm
   Paquete / Cubierta: TO252
 

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FXN0703D Datasheet (PDF)

 ..1. Size:296K  cn fx-semi
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FXN0703D

FuXin Semiconductor Co., Ltd. FXN0703D Series Rev.A General Description Features The FXN0703D uses advanced Silicon s MOSFET Technology, which VDS = 30V provides high performance in on-state resistance, fast switching ID = 70A @VGS = 10V performance, and excellent quality. Very low on-resistance These devices can also be utilized in industria

 8.1. Size:317K  cn fx-semi
fxn0706c.pdf pdf_icon

FXN0703D

FuXin Semiconductor Co., Ltd. FXN0706C Series Rev.A General Description Features The FXN0706C uses advanced Silicon s MOSFET Technology, which VDS = 65V provides high performance in on-state resistance, fast switching ID = 100A @VGS = 10V performance, and excellent quality. Very low on-resistance These devices can also be utilized in industri

 8.2. Size:364K  cn fx-semi
fxn0704c.pdf pdf_icon

FXN0703D

FuXin Semiconductor Co., Ltd. FXN0704C Series Rev.A General Description Features The FXN0704C uses advanced Silicon s MOSFET Technology, which VDS = 40V provides high performance in on-state resistance, fast switching ID = 60A @VGS = 10V performance, and excellent quality. Very low on-resistance These devices can also be utilized in industria

 8.3. Size:938K  cn fx-semi
fxn0707cn.pdf pdf_icon

FXN0703D

FuXin Semiconductor Co., Ltd.FXN0707CN Series Rev.AGeneral Description FeaturesThe FXN0707CN uses advanced Silicon s MOSFET Technology, whichVDS = 75Vprovides high performance in on-state resistance, fast switchingID = 100A @VGS = 10Vperformance, and excellent quality.Very low on-resistanceThese devices can also be utilized in industrial appli

Otros transistores... AOUS66416 , AOUS66616 , AOUS66620 , AOUS66920 , AOUS66923 , FXN0603D , FXN0607CN , FXN06S085C , P0903BDG , FXN0704C , FXN0406H , FXN0503D , FXN0504D , FXN0507C , FXN0305C , FXN0404C , FXN0405C .

History: YJL3415A | SPW20N60C3 | 6N60KL-TA3-T | AUIRFR2307ZTR | BRCS250N10SDP | 36N06 | 2SK2074

 

 
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