Справочник MOSFET. FXN0703D

 

FXN0703D Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: FXN0703D
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 55 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 58 A
   Tj ⓘ - Максимальная температура канала: 175 °C
   tr ⓘ - Время нарастания: 8.5 ns
   Cossⓘ - Выходная емкость: 180 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.007 Ohm
   Тип корпуса: TO252
 

 Аналог (замена) для FXN0703D

   - подбор ⓘ MOSFET транзистора по параметрам

 

FXN0703D Datasheet (PDF)

 ..1. Size:296K  cn fx-semi
fxn0703d.pdfpdf_icon

FXN0703D

FuXin Semiconductor Co., Ltd. FXN0703D Series Rev.A General Description Features The FXN0703D uses advanced Silicon s MOSFET Technology, which VDS = 30V provides high performance in on-state resistance, fast switching ID = 70A @VGS = 10V performance, and excellent quality. Very low on-resistance These devices can also be utilized in industria

 8.1. Size:317K  cn fx-semi
fxn0706c.pdfpdf_icon

FXN0703D

FuXin Semiconductor Co., Ltd. FXN0706C Series Rev.A General Description Features The FXN0706C uses advanced Silicon s MOSFET Technology, which VDS = 65V provides high performance in on-state resistance, fast switching ID = 100A @VGS = 10V performance, and excellent quality. Very low on-resistance These devices can also be utilized in industri

 8.2. Size:364K  cn fx-semi
fxn0704c.pdfpdf_icon

FXN0703D

FuXin Semiconductor Co., Ltd. FXN0704C Series Rev.A General Description Features The FXN0704C uses advanced Silicon s MOSFET Technology, which VDS = 40V provides high performance in on-state resistance, fast switching ID = 60A @VGS = 10V performance, and excellent quality. Very low on-resistance These devices can also be utilized in industria

 8.3. Size:938K  cn fx-semi
fxn0707cn.pdfpdf_icon

FXN0703D

FuXin Semiconductor Co., Ltd.FXN0707CN Series Rev.AGeneral Description FeaturesThe FXN0707CN uses advanced Silicon s MOSFET Technology, whichVDS = 75Vprovides high performance in on-state resistance, fast switchingID = 100A @VGS = 10Vperformance, and excellent quality.Very low on-resistanceThese devices can also be utilized in industrial appli

Другие MOSFET... AOUS66416 , AOUS66616 , AOUS66620 , AOUS66920 , AOUS66923 , FXN0603D , FXN0607CN , FXN06S085C , P0903BDG , FXN0704C , FXN0406H , FXN0503D , FXN0504D , FXN0507C , FXN0305C , FXN0404C , FXN0405C .

History: 6N60KL-TA3-T | SSM3K7002F | NTMFS5113PL | FDZ7296 | NCE60NP2016G | P1402CDG | MTNK5N3

 

 
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