FXN0704C MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FXN0704C

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 80 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 52 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 35 nS

Cossⓘ - Capacitancia de salida: 158 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.009 Ohm

Encapsulados: TO220

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FXN0704C datasheet

 ..1. Size:364K  cn fx-semi
 fxn0704c.pdf pdf_icon

FXN0704C

FuXin Semiconductor Co., Ltd. FXN0704C Series Rev.A General Description Features The FXN0704C uses advanced Silicon s MOSFET Technology, which VDS = 40V provides high performance in on-state resistance, fast switching ID = 60A @VGS = 10V performance, and excellent quality. Very low on-resistance These devices can also be utilized in industria

 7.1. Size:626K  cn fx-semi
 fxn0704f.pdf pdf_icon

FXN0704C

FuXin Semiconductor Co., Ltd. FXN0704F Series Rev.A General Description Features The FXN0704F uses advanced Silicon s MOSFET Technology, which VDS = 40V provides high performance in on-state resistance, fast switching ID = 40A @VGS = 10V performance, and excellent quality. Very low on-resistance These devices can also be utilized in industrial applicat

 8.1. Size:296K  cn fx-semi
 fxn0703d.pdf pdf_icon

FXN0704C

FuXin Semiconductor Co., Ltd. FXN0703D Series Rev.A General Description Features The FXN0703D uses advanced Silicon s MOSFET Technology, which VDS = 30V provides high performance in on-state resistance, fast switching ID = 70A @VGS = 10V performance, and excellent quality. Very low on-resistance These devices can also be utilized in industria

 8.2. Size:317K  cn fx-semi
 fxn0706c.pdf pdf_icon

FXN0704C

FuXin Semiconductor Co., Ltd. FXN0706C Series Rev.A General Description Features The FXN0706C uses advanced Silicon s MOSFET Technology, which VDS = 65V provides high performance in on-state resistance, fast switching ID = 100A @VGS = 10V performance, and excellent quality. Very low on-resistance These devices can also be utilized in industri

MOSTRAR MÁS

Otros transistores... AOUS66616, AOUS66620, AOUS66920, AOUS66923, FXN0603D, FXN0607CN, FXN06S085C, FXN0703D, 2SK3568, FXN0406H, FXN0503D, FXN0504D, FXN0507C, FXN0305C, FXN0404C, FXN0405C, FXN0406C