FXN0704C MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FXN0704C
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 80 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 52 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 35 nS
Cossⓘ - Capacitancia de salida: 158 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.009 Ohm
Paquete / Cubierta: TO220
Búsqueda de reemplazo de FXN0704C MOSFET
FXN0704C Datasheet (PDF)
fxn0704c.pdf

FuXin Semiconductor Co., Ltd. FXN0704C Series Rev.A General Description Features The FXN0704C uses advanced Silicon s MOSFET Technology, which VDS = 40V provides high performance in on-state resistance, fast switching ID = 60A @VGS = 10V performance, and excellent quality. Very low on-resistance These devices can also be utilized in industria
fxn0704f.pdf

FuXin Semiconductor Co., Ltd.FXN0704F Series Rev.AGeneral Description FeaturesThe FXN0704F uses advanced Silicon s MOSFET Technology, whichVDS = 40Vprovides high performance in on-state resistance, fast switchingID = 40A @VGS = 10Vperformance, and excellent quality.Very low on-resistanceThese devices can also be utilized in industrial applicat
fxn0703d.pdf

FuXin Semiconductor Co., Ltd. FXN0703D Series Rev.A General Description Features The FXN0703D uses advanced Silicon s MOSFET Technology, which VDS = 30V provides high performance in on-state resistance, fast switching ID = 70A @VGS = 10V performance, and excellent quality. Very low on-resistance These devices can also be utilized in industria
fxn0706c.pdf

FuXin Semiconductor Co., Ltd. FXN0706C Series Rev.A General Description Features The FXN0706C uses advanced Silicon s MOSFET Technology, which VDS = 65V provides high performance in on-state resistance, fast switching ID = 100A @VGS = 10V performance, and excellent quality. Very low on-resistance These devices can also be utilized in industri
Otros transistores... AOUS66616 , AOUS66620 , AOUS66920 , AOUS66923 , FXN0603D , FXN0607CN , FXN06S085C , FXN0703D , 5N65 , FXN0406H , FXN0503D , FXN0504D , FXN0507C , FXN0305C , FXN0404C , FXN0405C , FXN0406C .
History: AOB409L | HTD2K4P15T | NCE85H21C | NTJS4405NT1 | SHD225628 | HM1607D
History: AOB409L | HTD2K4P15T | NCE85H21C | NTJS4405NT1 | SHD225628 | HM1607D



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