FXN0704C
MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: FXN0704C
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 80
W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 40
V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20
V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 2
V
|Id|ⓘ - Максимально
допустимый постоянный ток стока: 52
A
Tjⓘ - Максимальная температура канала: 175
°C
Qgⓘ -
Общий заряд затвора: 45
nC
trⓘ -
Время нарастания: 35
ns
Cossⓘ - Выходная емкость: 158
pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.009
Ohm
Тип корпуса:
TO220
Аналог (замена) для FXN0704C
FXN0704C
Datasheet (PDF)
..1. Size:364K cn fx-semi
fxn0704c.pdf 
FuXin Semiconductor Co., Ltd. FXN0704C Series Rev.A General Description Features The FXN0704C uses advanced Silicon s MOSFET Technology, which VDS = 40V provides high performance in on-state resistance, fast switching ID = 60A @VGS = 10V performance, and excellent quality. Very low on-resistance These devices can also be utilized in industria
7.1. Size:626K cn fx-semi
fxn0704f.pdf 
FuXin Semiconductor Co., Ltd.FXN0704F Series Rev.AGeneral Description FeaturesThe FXN0704F uses advanced Silicon s MOSFET Technology, whichVDS = 40Vprovides high performance in on-state resistance, fast switchingID = 40A @VGS = 10Vperformance, and excellent quality.Very low on-resistanceThese devices can also be utilized in industrial applicat
8.1. Size:296K cn fx-semi
fxn0703d.pdf 
FuXin Semiconductor Co., Ltd. FXN0703D Series Rev.A General Description Features The FXN0703D uses advanced Silicon s MOSFET Technology, which VDS = 30V provides high performance in on-state resistance, fast switching ID = 70A @VGS = 10V performance, and excellent quality. Very low on-resistance These devices can also be utilized in industria
8.2. Size:317K cn fx-semi
fxn0706c.pdf 
FuXin Semiconductor Co., Ltd. FXN0706C Series Rev.A General Description Features The FXN0706C uses advanced Silicon s MOSFET Technology, which VDS = 65V provides high performance in on-state resistance, fast switching ID = 100A @VGS = 10V performance, and excellent quality. Very low on-resistance These devices can also be utilized in industri
8.3. Size:938K cn fx-semi
fxn0707cn.pdf 
FuXin Semiconductor Co., Ltd.FXN0707CN Series Rev.AGeneral Description FeaturesThe FXN0707CN uses advanced Silicon s MOSFET Technology, whichVDS = 75Vprovides high performance in on-state resistance, fast switchingID = 100A @VGS = 10Vperformance, and excellent quality.Very low on-resistanceThese devices can also be utilized in industrial appli
8.4. Size:315K cn fx-semi
fxn0707c.pdf 
FuXin Semiconductor Co., Ltd. FXN0707C Series Rev.A General Description Features The FXN0707C uses advanced Silicon s MOSFET Technology, which VDS = 70V provides high performance in on-state resistance, fast switching ID = 100A @VGS = 10V performance, and excellent quality. Very low on-resistance These devices can also be utilized in industri
Другие MOSFET... IRFP360LC
, IRFP3710
, IRFP430
, IRFP431
, IRFP432
, IRFP433
, IRFP440
, IRFP440A
, IRFP250
, IRFP442
, IRFP443
, IRFP448
, IRFP450
, IRFP450A
, IRFP450FI
, IRFP450LC
, IRFP451
.
