FXN0704C. Аналоги и основные параметры

Наименование производителя: FXN0704C

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 80 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 40 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 52 A

Tj ⓘ - Максимальная температура канала: 175 °C

Электрические характеристики

tr ⓘ - Время нарастания: 35 ns

Cossⓘ - Выходная емкость: 158 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.009 Ohm

Тип корпуса: TO220

Аналог (замена) для FXN0704C

- подборⓘ MOSFET транзистора по параметрам

 

FXN0704C даташит

 ..1. Size:364K  cn fx-semi
 fxn0704c.pdf pdf_icon

FXN0704C

FuXin Semiconductor Co., Ltd. FXN0704C Series Rev.A General Description Features The FXN0704C uses advanced Silicon s MOSFET Technology, which VDS = 40V provides high performance in on-state resistance, fast switching ID = 60A @VGS = 10V performance, and excellent quality. Very low on-resistance These devices can also be utilized in industria

 7.1. Size:626K  cn fx-semi
 fxn0704f.pdf pdf_icon

FXN0704C

FuXin Semiconductor Co., Ltd. FXN0704F Series Rev.A General Description Features The FXN0704F uses advanced Silicon s MOSFET Technology, which VDS = 40V provides high performance in on-state resistance, fast switching ID = 40A @VGS = 10V performance, and excellent quality. Very low on-resistance These devices can also be utilized in industrial applicat

 8.1. Size:296K  cn fx-semi
 fxn0703d.pdf pdf_icon

FXN0704C

FuXin Semiconductor Co., Ltd. FXN0703D Series Rev.A General Description Features The FXN0703D uses advanced Silicon s MOSFET Technology, which VDS = 30V provides high performance in on-state resistance, fast switching ID = 70A @VGS = 10V performance, and excellent quality. Very low on-resistance These devices can also be utilized in industria

 8.2. Size:317K  cn fx-semi
 fxn0706c.pdf pdf_icon

FXN0704C

FuXin Semiconductor Co., Ltd. FXN0706C Series Rev.A General Description Features The FXN0706C uses advanced Silicon s MOSFET Technology, which VDS = 65V provides high performance in on-state resistance, fast switching ID = 100A @VGS = 10V performance, and excellent quality. Very low on-resistance These devices can also be utilized in industri

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