FXN0507C
MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FXN0507C
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 65
W
|Vds|ⓘ - Voltaje máximo drenador - fuente: 70
V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20
V
|Id|ⓘ - Corriente continua de drenaje: 75
A
Tjⓘ - Temperatura máxima de unión: 175
°C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4
V
Qgⓘ - Carga de la puerta: 38
nC
trⓘ - Tiempo de subida: 46
nS
Cossⓘ - Capacitancia
de salida: 720
pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0068
Ohm
Paquete / Cubierta:
TO220
Búsqueda de reemplazo de MOSFET FXN0507C
FXN0507C
Datasheet (PDF)
..1. Size:874K cn fx-semi
fxn0507c.pdf
FuXin Semiconductor Co., Ltd.FXN0507C Series Rev.AGeneral Description FeaturesThe FXN0507C uses advanced Silicon s MOSFET Technology, whichVDS = 70Vprovides high performance in on-state resistance, fast switchingID = 100A @VGS = 10Vperformance, and excellent quality.Very low on-resistanceThese devices can also be utilized in industrial applica
8.1. Size:315K cn fx-semi
fxn0503d.pdf
FuXin Semiconductor Co., Ltd. FXN0503D Series Rev.A General Description Features The FXN0503D uses advanced Silicon s MOSFET Technology, which VDS = 30V provides high performance in on-state resistance, fast switching ID = 80A @VGS = 10V performance, and excellent quality. Very low on-resistance These devices can also be utilized in industria
8.2. Size:958K cn fx-semi
fxn0504d.pdf
FuXin Semiconductor Co., Ltd. FXN0504D Series Rev.A General Description Features The FXN0504D uses advanced Silicon s MOSFET Technology, which VDS = 40V provides high performance in on-state resistance, fast switching ID = 70A @VGS = 10V performance, and excellent quality. Very low on-resistance These devices can also be utilized in industria
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