FXN0507C Specs and Replacement
Type Designator: FXN0507C
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 65 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 70 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 75 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 46 nS
Cossⓘ - Output Capacitance: 720 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0068 Ohm
Package: TO220
FXN0507C substitution
- MOSFET ⓘ Cross-Reference Search
FXN0507C datasheet
fxn0507c.pdf
FuXin Semiconductor Co., Ltd. FXN0507C Series Rev.A General Description Features The FXN0507C uses advanced Silicon s MOSFET Technology, which VDS = 70V provides high performance in on-state resistance, fast switching ID = 100A @VGS = 10V performance, and excellent quality. Very low on-resistance These devices can also be utilized in industrial applica... See More ⇒
fxn0503d.pdf
FuXin Semiconductor Co., Ltd. FXN0503D Series Rev.A General Description Features The FXN0503D uses advanced Silicon s MOSFET Technology, which VDS = 30V provides high performance in on-state resistance, fast switching ID = 80A @VGS = 10V performance, and excellent quality. Very low on-resistance These devices can also be utilized in industria... See More ⇒
fxn0504d.pdf
FuXin Semiconductor Co., Ltd. FXN0504D Series Rev.A General Description Features The FXN0504D uses advanced Silicon s MOSFET Technology, which VDS = 40V provides high performance in on-state resistance, fast switching ID = 70A @VGS = 10V performance, and excellent quality. Very low on-resistance These devices can also be utilized in industria... See More ⇒
Detailed specifications: FXN0603D, FXN0607CN, FXN06S085C, FXN0703D, FXN0704C, FXN0406H, FXN0503D, FXN0504D, SI2302, FXN0305C, FXN0404C, FXN0405C, FXN0406C, FXN0205C, FXN0206C, FXN0303D, FXN0304C
Keywords - FXN0507C MOSFET specs
FXN0507C cross reference
FXN0507C equivalent finder
FXN0507C pdf lookup
FXN0507C substitution
FXN0507C replacement
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History: VN30AB
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