FXN0507C Datasheet and Replacement
Type Designator: FXN0507C
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 65 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 70 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 75 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 46 nS
Cossⓘ - Output Capacitance: 720 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0068 Ohm
Package: TO220
FXN0507C substitution
FXN0507C Datasheet (PDF)
fxn0507c.pdf

FuXin Semiconductor Co., Ltd.FXN0507C Series Rev.AGeneral Description FeaturesThe FXN0507C uses advanced Silicon s MOSFET Technology, whichVDS = 70Vprovides high performance in on-state resistance, fast switchingID = 100A @VGS = 10Vperformance, and excellent quality.Very low on-resistanceThese devices can also be utilized in industrial applica
fxn0503d.pdf

FuXin Semiconductor Co., Ltd. FXN0503D Series Rev.A General Description Features The FXN0503D uses advanced Silicon s MOSFET Technology, which VDS = 30V provides high performance in on-state resistance, fast switching ID = 80A @VGS = 10V performance, and excellent quality. Very low on-resistance These devices can also be utilized in industria
fxn0504d.pdf

FuXin Semiconductor Co., Ltd. FXN0504D Series Rev.A General Description Features The FXN0504D uses advanced Silicon s MOSFET Technology, which VDS = 40V provides high performance in on-state resistance, fast switching ID = 70A @VGS = 10V performance, and excellent quality. Very low on-resistance These devices can also be utilized in industria
Datasheet: FXN0603D , FXN0607CN , FXN06S085C , FXN0703D , FXN0704C , FXN0406H , FXN0503D , FXN0504D , IRFZ46N , FXN0305C , FXN0404C , FXN0405C , FXN0406C , FXN0205C , FXN0206C , FXN0303D , FXN0304C .
History: PHB66NQ03LT | IRF7739L1 | DMP3020LSS
Keywords - FXN0507C MOSFET datasheet
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History: PHB66NQ03LT | IRF7739L1 | DMP3020LSS



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