FXN0305C MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FXN0305C
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 300 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 50 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 220 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 68 nS
Cossⓘ - Capacitancia de salida: 780 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.003 Ohm
Paquete / Cubierta: TO220
Búsqueda de reemplazo de FXN0305C MOSFET
FXN0305C Datasheet (PDF)
fxn0305c.pdf
FuXin Semiconductor Co., Ltd. FXN0305C Series Rev.A General Description Features The FXN0305C uses advanced Silicon s MOSFET Technology, which VDS = 50V provides high performance in on-state resistance, fast switching ID = 240A @VGS = 10V performance, and excellent quality. Very low on-resistance These devices can also be utilized in industri
fxn0303d.pdf
FuXin Semiconductor Co., Ltd. FXN0303D Series Rev.A General Description Features The FXN0303D uses advanced Silicon s MOSFET Technology, which VDS = 30V provides high performance in on-state resistance, fast switching ID = 110A @VGS = 10V performance, and excellent quality. Very low on-resistance These devices can also be utilized in industri
fxn0304c.pdf
FuXin Semiconductor Co., Ltd.FXN0304C Series Rev.AGeneral Description FeaturesThe FXN0304C uses advanced Silicon s MOSFET Technology, whichVDS = 40Vprovides high performance in on-state resistance, fast switchingID = 120A @VGS = 10Vperformance, and excellent quality.Very low on-resistanceThese devices can also be utilized in industrial applica
Otros transistores... FXN0607CN , FXN06S085C , FXN0703D , FXN0704C , FXN0406H , FXN0503D , FXN0504D , FXN0507C , AO3407 , FXN0404C , FXN0405C , FXN0406C , FXN0205C , FXN0206C , FXN0303D , FXN0304C , FXN9N45F .
History: IRFS840B | FXN10N06D | CJ4459
History: IRFS840B | FXN10N06D | CJ4459
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