FXN0305C
MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FXN0305C
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 300
W
|Vds|ⓘ - Voltaje máximo drenador - fuente: 50
V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20
V
|Id|ⓘ - Corriente continua de drenaje: 220
A
Tjⓘ - Temperatura máxima de unión: 175
°C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4
V
Qgⓘ - Carga de la puerta: 75
nC
trⓘ - Tiempo de subida: 68
nS
Cossⓘ - Capacitancia
de salida: 780
pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.003
Ohm
Paquete / Cubierta:
TO220
Búsqueda de reemplazo de MOSFET FXN0305C
FXN0305C
Datasheet (PDF)
..1. Size:903K cn fx-semi
fxn0305c.pdf
FuXin Semiconductor Co., Ltd. FXN0305C Series Rev.A General Description Features The FXN0305C uses advanced Silicon s MOSFET Technology, which VDS = 50V provides high performance in on-state resistance, fast switching ID = 240A @VGS = 10V performance, and excellent quality. Very low on-resistance These devices can also be utilized in industri
8.1. Size:362K cn fx-semi
fxn0303d.pdf
FuXin Semiconductor Co., Ltd. FXN0303D Series Rev.A General Description Features The FXN0303D uses advanced Silicon s MOSFET Technology, which VDS = 30V provides high performance in on-state resistance, fast switching ID = 110A @VGS = 10V performance, and excellent quality. Very low on-resistance These devices can also be utilized in industri
8.2. Size:485K cn fx-semi
fxn0304c.pdf
FuXin Semiconductor Co., Ltd.FXN0304C Series Rev.AGeneral Description FeaturesThe FXN0304C uses advanced Silicon s MOSFET Technology, whichVDS = 40Vprovides high performance in on-state resistance, fast switchingID = 120A @VGS = 10Vperformance, and excellent quality.Very low on-resistanceThese devices can also be utilized in industrial applica
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