FXN0305C Datasheet and Replacement
Type Designator: FXN0305C
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 300 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 50 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 220 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 68 nS
Cossⓘ - Output Capacitance: 780 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.003 Ohm
Package: TO220
FXN0305C substitution
FXN0305C Datasheet (PDF)
fxn0305c.pdf

FuXin Semiconductor Co., Ltd. FXN0305C Series Rev.A General Description Features The FXN0305C uses advanced Silicon s MOSFET Technology, which VDS = 50V provides high performance in on-state resistance, fast switching ID = 240A @VGS = 10V performance, and excellent quality. Very low on-resistance These devices can also be utilized in industri
fxn0303d.pdf

FuXin Semiconductor Co., Ltd. FXN0303D Series Rev.A General Description Features The FXN0303D uses advanced Silicon s MOSFET Technology, which VDS = 30V provides high performance in on-state resistance, fast switching ID = 110A @VGS = 10V performance, and excellent quality. Very low on-resistance These devices can also be utilized in industri
fxn0304c.pdf

FuXin Semiconductor Co., Ltd.FXN0304C Series Rev.AGeneral Description FeaturesThe FXN0304C uses advanced Silicon s MOSFET Technology, whichVDS = 40Vprovides high performance in on-state resistance, fast switchingID = 120A @VGS = 10Vperformance, and excellent quality.Very low on-resistanceThese devices can also be utilized in industrial applica
Datasheet: FXN0607CN , FXN06S085C , FXN0703D , FXN0704C , FXN0406H , FXN0503D , FXN0504D , FXN0507C , 7N60 , FXN0404C , FXN0405C , FXN0406C , FXN0205C , FXN0206C , FXN0303D , FXN0304C , FXN9N45F .
History: SVS70R600DE3TR | STD35NF3LLT4 | IXTT140N10P | SSF2341E | IXTQ86N20T | UPA1830GR | RJM0306JSP
Keywords - FXN0305C MOSFET datasheet
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History: SVS70R600DE3TR | STD35NF3LLT4 | IXTT140N10P | SSF2341E | IXTQ86N20T | UPA1830GR | RJM0306JSP



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