FXN0206C Todos los transistores

 

FXN0206C MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FXN0206C
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 160 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 65 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 145 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 37 nS
   Cossⓘ - Capacitancia de salida: 530 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0028 Ohm
   Paquete / Cubierta: TO220
 

 Búsqueda de reemplazo de FXN0206C MOSFET

   - Selección ⓘ de transistores por parámetros

 

FXN0206C Datasheet (PDF)

 ..1. Size:781K  cn fx-semi
 fxn0206c.pdf pdf_icon

FXN0206C

FuXin Semiconductor Co., Ltd. FXN0206C Series Rev.AGeneral Description Features The FXN0206C uses advanced Silicon s MOSFET Technology, which VDS = 65V provides high performance in on-state resistance, fast switching ID = 190A @VGS = 10V performance, and excellent quality. Very low on-resistance These devices can also be utilized in industria

 8.1. Size:657K  cn fx-semi
 fxn0204cq.pdf pdf_icon

FXN0206C

FuXin Semiconductor Co., Ltd. FXN0204CQ Serise Rev.A General Description Features The FXN0204CQ uses advanced Silicon s MOSFET Technology, which VDS = 40V provides high performance in on-state resistance, fast switching ID = 280A @VGS = 10V performance, and excellent quality. Very low on-resistance These devices can also be utilized in indus

 8.2. Size:807K  cn fx-semi
 fxn0205c.pdf pdf_icon

FXN0206C

FuXin Semiconductor Co., Ltd. FXN0205C Series Rev.A General Description Features The FXN0205C uses advanced Silicon s MOSFET Technology, which VDS = 50V provides high performance in on-state resistance, fast switching ID = 280A @VGS = 10V performance, and excellent quality. Very low on-resistance These devices can also be utilized in industri

 8.3. Size:1086K  cn fx-semi
 fxn0204c.pdf pdf_icon

FXN0206C

FuXin Semiconductor Co., Ltd. FXN0204C Series Rev.A General Description Features The FXN0204C uses advanced Silicon s MOSFET Technology, which VDS = 40V provides high performance in on-state resistance, fast switching ID = 280A @VGS = 10V performance, and excellent quality. Very low on-resistance These devices can also be utilized in industri

MOSTRAR MÁS

Otros transistores... FXN0503D , FXN0504D , FXN0507C , FXN0305C , FXN0404C , FXN0405C , FXN0406C , FXN0205C , IRF2807 , FXN0303D , FXN0304C , FXN9N45F , FXN9N50F , FXN9N90F , FXN9N90P , FXN15S50F , FXN18N20C .

 

 
Back to Top

 


 
.