All MOSFET. FXN0206C Datasheet

 

FXN0206C Datasheet and Replacement


   Type Designator: FXN0206C
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 160 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 65 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 145 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 37 nS
   Cossⓘ - Output Capacitance: 530 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0028 Ohm
   Package: TO220
 

 FXN0206C substitution

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FXN0206C Datasheet (PDF)

 ..1. Size:781K  cn fx-semi
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FXN0206C

FuXin Semiconductor Co., Ltd. FXN0206C Series Rev.AGeneral Description Features The FXN0206C uses advanced Silicon s MOSFET Technology, which VDS = 65V provides high performance in on-state resistance, fast switching ID = 190A @VGS = 10V performance, and excellent quality. Very low on-resistance These devices can also be utilized in industria

 8.1. Size:657K  cn fx-semi
 fxn0204cq.pdf pdf_icon

FXN0206C

FuXin Semiconductor Co., Ltd. FXN0204CQ Serise Rev.A General Description Features The FXN0204CQ uses advanced Silicon s MOSFET Technology, which VDS = 40V provides high performance in on-state resistance, fast switching ID = 280A @VGS = 10V performance, and excellent quality. Very low on-resistance These devices can also be utilized in indus

 8.2. Size:807K  cn fx-semi
 fxn0205c.pdf pdf_icon

FXN0206C

FuXin Semiconductor Co., Ltd. FXN0205C Series Rev.A General Description Features The FXN0205C uses advanced Silicon s MOSFET Technology, which VDS = 50V provides high performance in on-state resistance, fast switching ID = 280A @VGS = 10V performance, and excellent quality. Very low on-resistance These devices can also be utilized in industri

 8.3. Size:1086K  cn fx-semi
 fxn0204c.pdf pdf_icon

FXN0206C

FuXin Semiconductor Co., Ltd. FXN0204C Series Rev.A General Description Features The FXN0204C uses advanced Silicon s MOSFET Technology, which VDS = 40V provides high performance in on-state resistance, fast switching ID = 280A @VGS = 10V performance, and excellent quality. Very low on-resistance These devices can also be utilized in industri

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Datasheet: FXN0503D , FXN0504D , FXN0507C , FXN0305C , FXN0404C , FXN0405C , FXN0406C , FXN0205C , STF13NM60N , FXN0303D , FXN0304C , FXN9N45F , FXN9N50F , FXN9N90F , FXN9N90P , FXN15S50F , FXN18N20C .

Keywords - FXN0206C MOSFET datasheet

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 
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