FXN0206C Specs and Replacement

Type Designator: FXN0206C

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 160 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 65 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 145 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 37 nS

Cossⓘ - Output Capacitance: 530 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0028 Ohm

Package: TO220

FXN0206C substitution

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FXN0206C datasheet

 ..1. Size:781K  cn fx-semi
 fxn0206c.pdf pdf_icon

FXN0206C

FuXin Semiconductor Co., Ltd. FXN0206C Series Rev.A General Description Features The FXN0206C uses advanced Silicon s MOSFET Technology, which VDS = 65V provides high performance in on-state resistance, fast switching ID = 190A @VGS = 10V performance, and excellent quality. Very low on-resistance These devices can also be utilized in industria... See More ⇒

 8.1. Size:657K  cn fx-semi
 fxn0204cq.pdf pdf_icon

FXN0206C

FuXin Semiconductor Co., Ltd. FXN0204CQ Serise Rev.A General Description Features The FXN0204CQ uses advanced Silicon s MOSFET Technology, which VDS = 40V provides high performance in on-state resistance, fast switching ID = 280A @VGS = 10V performance, and excellent quality. Very low on-resistance These devices can also be utilized in indus... See More ⇒

 8.2. Size:807K  cn fx-semi
 fxn0205c.pdf pdf_icon

FXN0206C

FuXin Semiconductor Co., Ltd. FXN0205C Series Rev.A General Description Features The FXN0205C uses advanced Silicon s MOSFET Technology, which VDS = 50V provides high performance in on-state resistance, fast switching ID = 280A @VGS = 10V performance, and excellent quality. Very low on-resistance These devices can also be utilized in industri... See More ⇒

 8.3. Size:1086K  cn fx-semi
 fxn0204c.pdf pdf_icon

FXN0206C

FuXin Semiconductor Co., Ltd. FXN0204C Series Rev.A General Description Features The FXN0204C uses advanced Silicon s MOSFET Technology, which VDS = 40V provides high performance in on-state resistance, fast switching ID = 280A @VGS = 10V performance, and excellent quality. Very low on-resistance These devices can also be utilized in industri... See More ⇒

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Detailed specifications: FXN0503D, FXN0504D, FXN0507C, FXN0305C, FXN0404C, FXN0405C, FXN0406C, FXN0205C, STF13NM60N, FXN0303D, FXN0304C, FXN9N45F, FXN9N50F, FXN9N90F, FXN9N90P, FXN15S50F, FXN18N20C

Keywords - FXN0206C MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.