FXN15S50F MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FXN15S50F

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 45 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 500 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 9.6 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 4 nS

Cossⓘ - Capacitancia de salida: 60 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.24 Ohm

Encapsulados: TO220F

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FXN15S50F datasheet

 ..1. Size:450K  cn fx-semi
fxn15s50f.pdf pdf_icon

FXN15S50F

FuXin Semiconductor Co., Ltd. FXN15S50F Series Rev.A General Description Features The FXN15S50F uses advanced Cool MOSFET Technology, which V = 500V DS provides high performance in on-state resistance, fast switching ID = 15A @V = 10V GS performance, and excellent quality. Very low on-resistance These devices can also be utilized in industrial application

 9.1. Size:701K  cn fx-semi
fxn15n06d.pdf pdf_icon

FXN15S50F

FuXin Semiconductor Co., Ltd. FXN15N06D Series Rev.A General Description Features The FXN15N06D uses advanced Silicon s MOSFET Technology, whic VDS = 60V h ID = 45A @VGS = 10V provides high performance in on-state resistance, fast switching Very low on-resistance performance, and excellent quality. RDS(ON)

 9.2. Size:479K  cn fx-semi
fxn15n50f.pdf pdf_icon

FXN15S50F

FuXin Semiconductor Co., Ltd. FXN15N50F Series Rev.A General Description Features The FXN15N50F uses advanced Silicon s MOSFET Technology, which V = 500V DS provides high performance in on-state resistance, fast switching ID = 15A @V = 10V GS performance, and excellent quality. Very low on-resistance These devices can also be utilized in industrial a

Otros transistores... FXN0205C, FXN0206C, FXN0303D, FXN0304C, FXN9N45F, FXN9N50F, FXN9N90F, FXN9N90P, IRFB31N20D, FXN18N20C, FXN18N50F, FXN20N50F, FXN0704F, FXN0706C, FXN0707C, FXN0707CN, FXN4613F