FXN15S50F Datasheet and Replacement
Type Designator: FXN15S50F
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 45 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 9.6 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 4 nS
Cossⓘ - Output Capacitance: 60 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.24 Ohm
Package: TO220F
FXN15S50F substitution
FXN15S50F Datasheet (PDF)
fxn15s50f.pdf

FuXin Semiconductor Co., Ltd.FXN15S50F Series Rev.AGeneral Description FeaturesThe FXN15S50F uses advanced Cool MOSFET Technology, whichV = 500VDSprovides high performance in on-state resistance, fast switchingID = 15A @V = 10VGSperformance, and excellent quality.Very low on-resistanceThese devices can also be utilized in industrial application
fxn15n06d.pdf

FuXin Semiconductor Co., Ltd. FXN15N06D Series Rev.AGeneral Description Features The FXN15N06D uses advanced Silicon s MOSFET Technology, whicVDS = 60V h ID = 45A @VGS = 10V provides high performance in on-state resistance, fast switching Very low on-resistance performance, and excellent quality. RDS(ON)
fxn15n50f.pdf

FuXin Semiconductor Co., Ltd.FXN15N50F Series Rev.AGeneral Description FeaturesThe FXN15N50F uses advanced Silicon s MOSFET Technology, whichV = 500VDSprovides high performance in on-state resistance, fast switchingID = 15A @V = 10VGSperformance, and excellent quality.Very low on-resistanceThese devices can also be utilized in industrial a
Datasheet: FXN0205C , FXN0206C , FXN0303D , FXN0304C , FXN9N45F , FXN9N50F , FXN9N90F , FXN9N90P , IRF730 , FXN18N20C , FXN18N50F , FXN20N50F , FXN0704F , FXN0706C , FXN0707C , FXN0707CN , FXN4613F .
History: CEB6086 | AP60WN2K3H | CSD25302Q2
Keywords - FXN15S50F MOSFET datasheet
FXN15S50F cross reference
FXN15S50F equivalent finder
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History: CEB6086 | AP60WN2K3H | CSD25302Q2



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