FXN0707C MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FXN0707C

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 90 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 70 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 63.5 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 26 nS

Cossⓘ - Capacitancia de salida: 272 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.008 Ohm

Encapsulados: TO220

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FXN0707C datasheet

 ..1. Size:315K  cn fx-semi
 fxn0707c.pdf pdf_icon

FXN0707C

FuXin Semiconductor Co., Ltd. FXN0707C Series Rev.A General Description Features The FXN0707C uses advanced Silicon s MOSFET Technology, which VDS = 70V provides high performance in on-state resistance, fast switching ID = 100A @VGS = 10V performance, and excellent quality. Very low on-resistance These devices can also be utilized in industri

 0.1. Size:938K  cn fx-semi
 fxn0707cn.pdf pdf_icon

FXN0707C

FuXin Semiconductor Co., Ltd. FXN0707CN Series Rev.A General Description Features The FXN0707CN uses advanced Silicon s MOSFET Technology, which VDS = 75V provides high performance in on-state resistance, fast switching ID = 100A @VGS = 10V performance, and excellent quality. Very low on-resistance These devices can also be utilized in industrial appli

 8.1. Size:296K  cn fx-semi
 fxn0703d.pdf pdf_icon

FXN0707C

FuXin Semiconductor Co., Ltd. FXN0703D Series Rev.A General Description Features The FXN0703D uses advanced Silicon s MOSFET Technology, which VDS = 30V provides high performance in on-state resistance, fast switching ID = 70A @VGS = 10V performance, and excellent quality. Very low on-resistance These devices can also be utilized in industria

 8.2. Size:317K  cn fx-semi
 fxn0706c.pdf pdf_icon

FXN0707C

FuXin Semiconductor Co., Ltd. FXN0706C Series Rev.A General Description Features The FXN0706C uses advanced Silicon s MOSFET Technology, which VDS = 65V provides high performance in on-state resistance, fast switching ID = 100A @VGS = 10V performance, and excellent quality. Very low on-resistance These devices can also be utilized in industri

MOSTRAR MÁS

Otros transistores... FXN9N90F, FXN9N90P, FXN15S50F, FXN18N20C, FXN18N50F, FXN20N50F, FXN0704F, FXN0706C, IRF830, FXN0707CN, FXN4613F, FXN4615F, FXN4620F, FXN4625F, FXN7N65F, FXN8N60F, FXN8N65D