FXN0707C Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: FXN0707C
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 90 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 70 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 63.5 A
Tjⓘ - Максимальная температура канала: 175 °C
Qgⓘ - Общий заряд затвора: 78 nC
trⓘ - Время нарастания: 26 ns
Cossⓘ - Выходная емкость: 272 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.008 Ohm
Тип корпуса: TO220
- подбор MOSFET транзистора по параметрам
FXN0707C Datasheet (PDF)
fxn0707c.pdf
FuXin Semiconductor Co., Ltd. FXN0707C Series Rev.A General Description Features The FXN0707C uses advanced Silicon s MOSFET Technology, which VDS = 70V provides high performance in on-state resistance, fast switching ID = 100A @VGS = 10V performance, and excellent quality. Very low on-resistance These devices can also be utilized in industri
fxn0707cn.pdf
FuXin Semiconductor Co., Ltd.FXN0707CN Series Rev.AGeneral Description FeaturesThe FXN0707CN uses advanced Silicon s MOSFET Technology, whichVDS = 75Vprovides high performance in on-state resistance, fast switchingID = 100A @VGS = 10Vperformance, and excellent quality.Very low on-resistanceThese devices can also be utilized in industrial appli
fxn0703d.pdf
FuXin Semiconductor Co., Ltd. FXN0703D Series Rev.A General Description Features The FXN0703D uses advanced Silicon s MOSFET Technology, which VDS = 30V provides high performance in on-state resistance, fast switching ID = 70A @VGS = 10V performance, and excellent quality. Very low on-resistance These devices can also be utilized in industria
fxn0706c.pdf
FuXin Semiconductor Co., Ltd. FXN0706C Series Rev.A General Description Features The FXN0706C uses advanced Silicon s MOSFET Technology, which VDS = 65V provides high performance in on-state resistance, fast switching ID = 100A @VGS = 10V performance, and excellent quality. Very low on-resistance These devices can also be utilized in industri
Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
Список транзисторов
Обновления
MOSFET: DH020N03E | DH020N03D | DH020N03B | DH020N03 | DH019N04I | DH019N04F | DH012N03U | DH012N03P | DH012N03I | DH012N03F | DH012N03E | DH012N03D | JMTE070N07A | HYG035N10NS2B | HYG035N10NS2P | B110N04