FXN0707C - описание и поиск аналогов

FuXin Semiconductor Co., Ltd. FXN0707C Series Rev.A General Description Features The FXN0707C uses advanced Silicon s MOSFET Technology, which VDS = 70V provides high performance in on-state resistance, fast switching ID = 100A @VGS = 10V performance, and excellent quality. Very low on-resistance These devices can also be utilized in industri

FuXin Semiconductor Co., Ltd. FXN0707CN Series Rev.A General Description Features The FXN0707CN uses advanced Silicon s MOSFET Technology, which VDS = 75V provides high performance in on-state resistance, fast switching ID = 100A @VGS = 10V performance, and excellent quality. Very low on-resistance These devices can also be utilized in industrial appli

FuXin Semiconductor Co., Ltd. FXN0703D Series Rev.A General Description Features The FXN0703D uses advanced Silicon s MOSFET Technology, which VDS = 30V provides high performance in on-state resistance, fast switching ID = 70A @VGS = 10V performance, and excellent quality. Very low on-resistance These devices can also be utilized in industria

FuXin Semiconductor Co., Ltd. FXN0706C Series Rev.A General Description Features The FXN0706C uses advanced Silicon s MOSFET Technology, which VDS = 65V provides high performance in on-state resistance, fast switching ID = 100A @VGS = 10V performance, and excellent quality. Very low on-resistance These devices can also be utilized in industri

FuXin Semiconductor Co., Ltd. FXN0704C Series Rev.A General Description Features The FXN0704C uses advanced Silicon s MOSFET Technology, which VDS = 40V provides high performance in on-state resistance, fast switching ID = 60A @VGS = 10V performance, and excellent quality. Very low on-resistance These devices can also be utilized in industria

FuXin Semiconductor Co., Ltd. FXN0704F Series Rev.A General Description Features The FXN0704F uses advanced Silicon s MOSFET Technology, which VDS = 40V provides high performance in on-state resistance, fast switching ID = 40A @VGS = 10V performance, and excellent quality. Very low on-resistance These devices can also be utilized in industrial applicat