FXN0707C - Даташиты. Аналоги. Основные параметры
Наименование производителя: FXN0707C
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 90 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 70 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 63.5 A
Tj ⓘ - Максимальная температура канала: 175 °C
tr ⓘ - Время нарастания: 26 ns
Cossⓘ - Выходная емкость: 272 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.008 Ohm
Тип корпуса: TO220
Аналог (замена) для FXN0707C
FXN0707C Datasheet (PDF)
fxn0707c.pdf

FuXin Semiconductor Co., Ltd. FXN0707C Series Rev.A General Description Features The FXN0707C uses advanced Silicon s MOSFET Technology, which VDS = 70V provides high performance in on-state resistance, fast switching ID = 100A @VGS = 10V performance, and excellent quality. Very low on-resistance These devices can also be utilized in industri
fxn0707cn.pdf

FuXin Semiconductor Co., Ltd.FXN0707CN Series Rev.AGeneral Description FeaturesThe FXN0707CN uses advanced Silicon s MOSFET Technology, whichVDS = 75Vprovides high performance in on-state resistance, fast switchingID = 100A @VGS = 10Vperformance, and excellent quality.Very low on-resistanceThese devices can also be utilized in industrial appli
fxn0703d.pdf

FuXin Semiconductor Co., Ltd. FXN0703D Series Rev.A General Description Features The FXN0703D uses advanced Silicon s MOSFET Technology, which VDS = 30V provides high performance in on-state resistance, fast switching ID = 70A @VGS = 10V performance, and excellent quality. Very low on-resistance These devices can also be utilized in industria
fxn0706c.pdf

FuXin Semiconductor Co., Ltd. FXN0706C Series Rev.A General Description Features The FXN0706C uses advanced Silicon s MOSFET Technology, which VDS = 65V provides high performance in on-state resistance, fast switching ID = 100A @VGS = 10V performance, and excellent quality. Very low on-resistance These devices can also be utilized in industri
Другие MOSFET... FXN9N90F , FXN9N90P , FXN15S50F , FXN18N20C , FXN18N50F , FXN20N50F , FXN0704F , FXN0706C , P0903BDG , FXN0707CN , FXN4613F , FXN4615F , FXN4620F , FXN4625F , FXN7N65F , FXN8N60F , FXN8N65D .
History: HY1707B | PSMN7R6-60BS
History: HY1707B | PSMN7R6-60BS



Список транзисторов
Обновления
MOSFET: APJ10N65P | APJ10N65T | APJ10N65F | AP65R950 | APJ10N65D | APG80N10T | APG80N10P | APG80N10NF | APG60N10T | APG60N10P | AP100P02NF | AP100N08D | AP100N04NF | AP100N04D | AP100N03Y | AP100N03T
Popular searches
2sc1364 | 2sc2320 | d669a transistor | 2sc1419 | 2sc1124 | 2n408 | 2sc2690 | d718 datasheet