FXN0707C Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: FXN0707C
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 90 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 70 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 63.5 A
   Tjⓘ - Максимальная температура канала: 175 °C
   trⓘ - Время нарастания: 26 ns
   Cossⓘ - Выходная емкость: 272 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.008 Ohm
   Тип корпуса: TO220
     - подбор MOSFET транзистора по параметрам

 

FXN0707C Datasheet (PDF)

 ..1. Size:315K  cn fx-semi
fxn0707c.pdfpdf_icon

FXN0707C

FuXin Semiconductor Co., Ltd. FXN0707C Series Rev.A General Description Features The FXN0707C uses advanced Silicon s MOSFET Technology, which VDS = 70V provides high performance in on-state resistance, fast switching ID = 100A @VGS = 10V performance, and excellent quality. Very low on-resistance These devices can also be utilized in industri

 0.1. Size:938K  cn fx-semi
fxn0707cn.pdfpdf_icon

FXN0707C

FuXin Semiconductor Co., Ltd.FXN0707CN Series Rev.AGeneral Description FeaturesThe FXN0707CN uses advanced Silicon s MOSFET Technology, whichVDS = 75Vprovides high performance in on-state resistance, fast switchingID = 100A @VGS = 10Vperformance, and excellent quality.Very low on-resistanceThese devices can also be utilized in industrial appli

 8.1. Size:296K  cn fx-semi
fxn0703d.pdfpdf_icon

FXN0707C

FuXin Semiconductor Co., Ltd. FXN0703D Series Rev.A General Description Features The FXN0703D uses advanced Silicon s MOSFET Technology, which VDS = 30V provides high performance in on-state resistance, fast switching ID = 70A @VGS = 10V performance, and excellent quality. Very low on-resistance These devices can also be utilized in industria

 8.2. Size:317K  cn fx-semi
fxn0706c.pdfpdf_icon

FXN0707C

FuXin Semiconductor Co., Ltd. FXN0706C Series Rev.A General Description Features The FXN0706C uses advanced Silicon s MOSFET Technology, which VDS = 65V provides high performance in on-state resistance, fast switching ID = 100A @VGS = 10V performance, and excellent quality. Very low on-resistance These devices can also be utilized in industri

Другие MOSFET... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

 

 
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