FQPF6N80C Todos los transistores

 

FQPF6N80C MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FQPF6N80C

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 51 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 800 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 5.5 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 2.5 Ohm

Encapsulados: TO220F

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FQPF6N80C datasheet

 ..1. Size:889K  fairchild semi
 fqp6n80c fqpf6n80c.pdf pdf_icon

FQPF6N80C

TM QFET FQP6N80C/FQPF6N80C 800V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 5.5A, 800V, RDS(on) = 2.5 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 21 nC) planar stripe, DMOS technology. Low Crss ( typical 8 pF) This advanced technology has been especially tailored to

 ..2. Size:890K  onsemi
 fqp6n80c fqpf6n80c.pdf pdf_icon

FQPF6N80C

TM QFET FQP6N80C/FQPF6N80C 800V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 5.5A, 800V, RDS(on) = 2.5 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 21 nC) planar stripe, DMOS technology. Low Crss ( typical 8 pF) This advanced technology has been especially tailored to

 6.1. Size:664K  fairchild semi
 fqpf6n80.pdf pdf_icon

FQPF6N80C

September 2000 TM QFET FQPF6N80 800V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 3.3A, 800V, RDS(on) = 1.95 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 31 nC) planar stripe, DMOS technology. Low Crss ( typical 14 pF) This advanced technology has been especially tail

 6.2. Size:1001K  fairchild semi
 fqpf6n80t.pdf pdf_icon

FQPF6N80C

TM QFET FQPF6N80T 800V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 3.3A, 800V, RDS(on) = 1.95 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 31 nC) planar stripe, DMOS technology. Low Crss ( typical 14 pF) This advanced technology has been especially tailored to

MOSTRAR MÁS

Otros transistores... FQPF4N90C , FQPF5N40 , FDD26AN06F085 , FQPF5N90 , FQPF5P20 , FQPF630 , FDMC8296 , FQPF65N06 , 4N60 , FDMS8880 , FQPF6N80T , FDH50N50 , FQPF6N90C , FQPF70N10 , FDH45N50F , FQPF7N60 , FDN5632NF085 .

History: FQPF32N20C | FQPF30N06L | FQPF5N40

 

 

 


 
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