FQPF6N80C Todos los transistores

 

FQPF6N80C MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FQPF6N80C
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 51 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 800 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 5.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 2.5 Ohm
   Paquete / Cubierta: TO220F

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FQPF6N80C Datasheet (PDF)

 ..1. Size:889K  fairchild semi
fqp6n80c fqpf6n80c.pdf

FQPF6N80C
FQPF6N80C

TMQFETFQP6N80C/FQPF6N80C800V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 5.5A, 800V, RDS(on) = 2.5 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 21 nC)planar stripe, DMOS technology. Low Crss ( typical 8 pF)This advanced technology has been especially tailored to

 ..2. Size:890K  onsemi
fqp6n80c fqpf6n80c.pdf

FQPF6N80C
FQPF6N80C

TMQFETFQP6N80C/FQPF6N80C800V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 5.5A, 800V, RDS(on) = 2.5 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 21 nC)planar stripe, DMOS technology. Low Crss ( typical 8 pF)This advanced technology has been especially tailored to

 6.1. Size:664K  fairchild semi
fqpf6n80.pdf

FQPF6N80C
FQPF6N80C

September 2000TMQFETFQPF6N80800V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 3.3A, 800V, RDS(on) = 1.95 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 31 nC)planar stripe, DMOS technology. Low Crss ( typical 14 pF)This advanced technology has been especially tail

 6.2. Size:1001K  fairchild semi
fqpf6n80t.pdf

FQPF6N80C
FQPF6N80C

TM QFETFQPF6N80T800V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 3.3A, 800V, RDS(on) = 1.95 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 31 nC)planar stripe, DMOS technology. Low Crss ( typical 14 pF)This advanced technology has been especially tailored to

 6.3. Size:549K  onsemi
fqpf6n80t.pdf

FQPF6N80C
FQPF6N80C

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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