All MOSFET. FQPF6N80C Datasheet

 

FQPF6N80C MOSFET. Datasheet pdf. Equivalent

Type Designator: FQPF6N80C

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 51 W

Maximum Drain-Source Voltage |Vds|: 800 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V

Maximum Drain Current |Id|: 5.5 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 21 nC

Maximum Drain-Source On-State Resistance (Rds): 2.5 Ohm

Package: TO220F

FQPF6N80C Transistor Equivalent Substitute - MOSFET Cross-Reference Search

FQPF6N80C Datasheet (PDF)

1.1. fqp6n80c fqpf6n80c.pdf Size:889K _fairchild_semi

FQPF6N80C
FQPF6N80C

TM QFET FQP6N80C/FQPF6N80C 800V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 5.5A, 800V, RDS(on) = 2.5? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 21 nC) planar stripe, DMOS technology. Low Crss ( typical 8 pF) This advanced technology has been especially tailored to Fast switc

2.1. fqpf6n80.pdf Size:664K _fairchild_semi

FQPF6N80C
FQPF6N80C

September 2000 TM QFET FQPF6N80 800V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 3.3A, 800V, RDS(on) = 1.95Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 31 nC) planar stripe, DMOS technology. • Low Crss ( typical 14 pF) This advanced technology has been especially tail

2.2. fqpf6n80t.pdf Size:1001K _fairchild_semi

FQPF6N80C
FQPF6N80C

TM QFET FQPF6N80T 800V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 3.3A, 800V, RDS(on) = 1.95? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 31 nC) planar stripe, DMOS technology. Low Crss ( typical 14 pF) This advanced technology has been especially tailored to Fast switching

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