FXN4625F Todos los transistores

 ..1. Size:573K  cn fx-semi
 fxn4625f.pdf

FuXin Semiconductor Co., Ltd. FXN4625F Series Rev.A General Description Features The FXN4625F uses advanced Silicon s MOSFET Technology, which V = 460V DS provides high performance in on-state resistance, fast switching ID =25A @V = 10V GS performance, and excellent quality. Very low on-resistance These devices can also be utilized in industrial appl

 8.1. Size:560K  cn fx-semi
 fxn4620f.pdf

FuXin Semiconductor Co., Ltd. FXN4620F Series Rev.A General Description Features The FXN4620F uses advanced Silicon s MOSFET Technology, which V =460V DS provides high performance in on-state resistance, fast switching ID = 20A @V = 10V GS performance, and excellent quality. Very low on-resistance These devices can also be utilized in industrial appl

 8.2. Size:581K  cn fx-semi
 fxn4628f.pdf

FuXin Semiconductor Co., Ltd. FXN4628F Series Rev.A General Description Features The FXN4628F uses advanced Silicon s MOSFET Technology, which V = 460V DS provides high performance in on-state resistance, fast switching ID =28A @V = 10V GS performance, and excellent quality. Very low on-resistance These devices can also be utilized in industrial appl

 9.1. Size:1122K  cn fx-semi
 fxn4615f.pdf

FuXin Semiconductor Co., Ltd. FXN4615F Series Rev.A General Description Features The FXN4615F uses advanced Silicon s MOSFET T echnology, which V = 460V DS provides high performance in on-state resistance, fast switching ID = 15A @V = 10V GS performance, and excellent quality. Very low on-resistance These devices can also be utilized in in

 9.2. Size:600K  cn fx-semi
 fxn4609f.pdf

FuXin Semiconductor Co., Ltd. FXN4609F Series Rev.A General Description Features The FXN4609F uses advanced Silicon s MOSFET Technology, which V = 460V DS provides high performance in on-state resistance, fast switching ID = 9A @V = 10V GS performance, and excellent quality. Very low on-resistance These devices can also be utilized in industrial appl

 9.3. Size:1500K  cn fx-semi
 fxn4613f.pdf

FuXin Semiconductor Co., Ltd. FXN4613F Series Rev.A General Description Features The FXN4613F uses advanced Silicon s MOSFET T echnology, which V = 460V DS provides high performance in on-state resistance, fast switching ID = 13A @V = 10V GS performance, and excellent quality. Very low on-resistance These devices can also be utilized in i

 9.4. Size:1085K  cn fx-semi
 fxn4611f.pdf

FuXin Semiconductor Co., Ltd. FXN4611F Series Rev.A General Description Features The FXN4611F uses advanced Silicon s MOSFET Technology, which V = 450V DS provides high performance in on-state resistance, fast switching ID = 11A @V =10V GS performance, and excellent quality. Very low on-resistance These devices can also be utilized in indus

 9.5. Size:1233K  cn fx-semi
 fxn4607f.pdf

FuXin Semiconductor Co., Ltd. FXN4607F Series Rev.A General Description Features The FXN4607F uses advanced Silicon s MOSFET Technology, which V = 450V DS provides high performance in on-state resistance, fast switching ID = 7A @V =10V GS performance, and excellent quality. Very low on-resistance These devices can also be utilized in indus