FXN4625F Datasheet: MOSFET, N-Ch, 460V, 20A. Full specification with pinout and replacement list

FXN4625F Datasheet. Specs and Replacement

Type Designator: FXN4625F 📄📄

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 98 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 460 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 20 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 38 nS

Cossⓘ - Output Capacitance: 1420 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.26 Ohm

Package: TO220F

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FXN4625F datasheet

..1. Size:573K cn fx-semi
fxn4625f.pdf pdf_icon

FuXin Semiconductor Co., Ltd. FXN4625F Series Rev.A General Description Features The FXN4625F uses advanced Silicon s MOSFET Technology, which V = 460V DS provides high performance in on-state resistance, fast switching ID =25A @V = 10V GS performance, and excellent quality. Very low on-resistance These devices can also be utilized in industrial appl... See More ⇒

8.1. Size:560K cn fx-semi
fxn4620f.pdf pdf_icon

FuXin Semiconductor Co., Ltd. FXN4620F Series Rev.A General Description Features The FXN4620F uses advanced Silicon s MOSFET Technology, which V =460V DS provides high performance in on-state resistance, fast switching ID = 20A @V = 10V GS performance, and excellent quality. Very low on-resistance These devices can also be utilized in industrial appl... See More ⇒

8.2. Size:581K cn fx-semi
fxn4628f.pdf pdf_icon

FuXin Semiconductor Co., Ltd. FXN4628F Series Rev.A General Description Features The FXN4628F uses advanced Silicon s MOSFET Technology, which V = 460V DS provides high performance in on-state resistance, fast switching ID =28A @V = 10V GS performance, and excellent quality. Very low on-resistance These devices can also be utilized in industrial appl... See More ⇒

9.1. Size:1122K cn fx-semi
fxn4615f.pdf pdf_icon

FuXin Semiconductor Co., Ltd. FXN4615F Series Rev.A General Description Features The FXN4615F uses advanced Silicon s MOSFET T echnology, which V = 460V DS provides high performance in on-state resistance, fast switching ID = 15A @V = 10V GS performance, and excellent quality. Very low on-resistance These devices can also be utilized in in... See More ⇒