FXN10N65F Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FXN10N65F  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 42 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 650 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 9.3 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 45 nS

Cossⓘ - Capacitancia de salida: 152 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.8 Ohm

Encapsulados: TO220F

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FXN10N65F datasheet

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FXN10N65F

FuXin Semiconductor Co., Ltd. FXN10N65F Series Rev.A General Description Features The FXN10N65F uses advanced Silicon s MOSFET Technology, which V = 650V DS provides high performance in on-state resistance, fast switching ID = 10A @V = 10V GS performance, and excellent quality. Very low on-resistance These devices can also be utilized in in

 8.1. Size:960K  cn fx-semi
 fxn10n50f.pdf pdf_icon

FXN10N65F

FuXin Semiconductor Co., Ltd. FXN10N50F Series Rev.A General Description Features The 10N50Fuses advanced Silicon s MOSFET T echnology, which FXN VDS = 500V provides high performance in on-state resistance, fast switching ID = 10A @VGS = 10V performance, and excellent quality. Very low on-resistance These devices can also be utilized in indust

 8.2. Size:478K  cn fx-semi
 fxn10n80f.pdf pdf_icon

FXN10N65F

FuXin Semiconductor Co., Ltd. FXN10N80F Series Rev.A General Description Features The FXN10N80F uses advanced Silicon s MOSFET Technology, which V = 800V DS provides high performance in on-state resistance, fast switching ID = 10A @V = 10V GS performance, and excellent quality. Very low on-resistance These devices can also be utilized in industrial a

 8.3. Size:858K  cn fx-semi
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FXN10N65F

FuXin Semiconductor Co., Ltd. FXN10N06D Series Rev.A General Description Features The FXN10N06D uses advanced Silicon s MOSFET Technology, which VDS = 60V provides high performance in on-state resistance, fast switching ID = 52A @VGS = 10V performance, and excellent quality. Very low on-resistance These devices can also be utilized in industri

MOSTRAR MÁS

Otros transistores... FXN4620F, FXN4625F, FXN7N65F, FXN8N60F, FXN8N65D, FXN8N65F, FXN10N06D, FXN10N50F, AON6426, FXN10N80F, FXN5N65D, FXN5N65F, FXN5N65FM, FXN65S55T, FXN07N10NS, FXN0808C, FXN08S65D