FXN10N65F - параметры транзистора MOSFET, его аналоги, datasheet

FXN10N65F Datasheet (PDF)

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FuXin Semiconductor Co., Ltd. FXN10N65F Series Rev.A General Description Features The FXN10N65F uses advanced Silicon s MOSFET Technology, which V = 650V DSprovides high performance in on-state resistance, fast switching ID = 10A @V = 10V GSperformance, and excellent quality. Very low on-resistance These devices can also be utilized in in

8.1. Size:960K cn fx-semi
fxn10n50f.pdf pdf_icon

FuXin Semiconductor Co., Ltd. FXN10N50F Series Rev.AGeneral Description Features The 10N50Fuses advanced Silicon s MOSFET T echnology, which FXN VDS = 500V provides high performance in on-state resistance, fast switching ID = 10A @VGS = 10V performance, and excellent quality. Very low on-resistance These devices can also be utilized in indust

8.2. Size:478K cn fx-semi
fxn10n80f.pdf pdf_icon

FuXin Semiconductor Co., Ltd.FXN10N80F Series Rev.AGeneral Description FeaturesThe FXN10N80F uses advanced Silicon s MOSFET Technology, whichV = 800VDSprovides high performance in on-state resistance, fast switchingID = 10A @V = 10VGSperformance, and excellent quality.Very low on-resistanceThese devices can also be utilized in industrial a

8.3. Size:858K cn fx-semi
fxn10n06d.pdf pdf_icon

FuXin Semiconductor Co., Ltd. FXN10N06D Series Rev.AGeneral Description Features The FXN10N06D uses advanced Silicon s MOSFET Technology, which VDS = 60V provides high performance in on-state resistance, fast switching ID = 52A @VGS = 10V performance, and excellent quality. Very low on-resistance These devices can also be utilized in industri

Другие MOSFET... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , SPP20N60C3 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .