FXN5N65D Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FXN5N65D  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 80 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 650 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 2.8 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 24.6 nS

Cossⓘ - Capacitancia de salida: 48 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 2.2 Ohm

Encapsulados: TO252

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FXN5N65D datasheet

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FXN5N65D

FuXin Semiconductor Co., Ltd. FXN5N65D Series Rev.A General Description Features The FXN5N65D uses advanced Silicon s MOSFET Technology, which VDS = 650V provides high performance in on-state resistance, fast switching ID = 5A @VGS = 10V performance, and excellent quality. Very low on-resistance These devices can also be utilized in industria

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FXN5N65D

FXN5N65F Electrical Characteristics (TJ =25oC) Characteristics Symbol Test Condition Min Typ Max Unit Static Characteristics Drain-Source Breakdown Voltage BVDSS ID = 250 A, VGS = 0V 660 - - V Gate Threshold Voltage VGS(th) - 2.0 4.0 VDS = VGS, ID = 250 A Drain Cut-Off Current IDSS VDS = 650V, VGS = 0V 1.0 - - A VGS = 30V, VDS = 0V - 0.1 Gate Leakage Current

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FXN5N65D

FuXin Semiconductor Co., Ltd. Rev.A FXN5N65FM Features General Description VDS = 650V The FXN5N65FM uses advanced Silicon s MOSFET Technology, which provides high performance in on-state resistance, ID = 5A @VGS = 10V fast switching performance, and excellent quality. Very low on-resistance RDS(ON)

Otros transistores... FXN7N65F, FXN8N60F, FXN8N65D, FXN8N65F, FXN10N06D, FXN10N50F, FXN10N65F, FXN10N80F, AOD4184A, FXN5N65F, FXN5N65FM, FXN65S55T, FXN07N10NS, FXN0808C, FXN08S65D, FXN09150C, FXN4607F