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FXN5N65D Specs and Replacement


   Type Designator: FXN5N65D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 80 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 2.8 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 24.6 nS
   Cossⓘ - Output Capacitance: 48 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.2 Ohm
   Package: TO252
 

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FXN5N65D Specs

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FXN5N65D

FuXin Semiconductor Co., Ltd. FXN5N65D Series Rev.A General Description Features The FXN5N65D uses advanced Silicon s MOSFET Technology, which VDS = 650V provides high performance in on-state resistance, fast switching ID = 5A @VGS = 10V performance, and excellent quality. Very low on-resistance These devices can also be utilized in industria... See More ⇒

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FXN5N65D

FXN5N65F Electrical Characteristics (TJ =25oC) Characteristics Symbol Test Condition Min Typ Max Unit Static Characteristics Drain-Source Breakdown Voltage BVDSS ID = 250 A, VGS = 0V 660 - - V Gate Threshold Voltage VGS(th) - 2.0 4.0 VDS = VGS, ID = 250 A Drain Cut-Off Current IDSS VDS = 650V, VGS = 0V 1.0 - - A VGS = 30V, VDS = 0V - 0.1 Gate Leakage Current... See More ⇒

 7.2. Size:910K  cn fx-semi
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FXN5N65D

FuXin Semiconductor Co., Ltd. Rev.A FXN5N65FM Features General Description VDS = 650V The FXN5N65FM uses advanced Silicon s MOSFET Technology, which provides high performance in on-state resistance, ID = 5A @VGS = 10V fast switching performance, and excellent quality. Very low on-resistance RDS(ON) ... See More ⇒

Detailed specifications: FXN7N65F , FXN8N60F , FXN8N65D , FXN8N65F , FXN10N06D , FXN10N50F , FXN10N65F , FXN10N80F , IRF730 , FXN5N65F , FXN5N65FM , FXN65S55T , FXN07N10NS , FXN0808C , FXN08S65D , FXN09150C , FXN4607F .

Keywords - FXN5N65D MOSFET specs

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