FXN5N65D Datasheet and Replacement. Cross Reference Search

FXN5N65D Datasheet (PDF)

..1. Size:591K cn fx-semi
fxn5n65d.pdf pdf_icon

FuXin Semiconductor Co., Ltd. FXN5N65D Series Rev.A General Description Features The FXN5N65D uses advanced Silicon s MOSFET Technology, which VDS = 650V provides high performance in on-state resistance, fast switching ID = 5A @VGS = 10V performance, and excellent quality. Very low on-resistance These devices can also be utilized in industria

7.1. Size:366K cn fx-semi
fxn5n65f.pdf pdf_icon

FXN5N65F Electrical Characteristics (TJ =25oC) Characteristics Symbol Test Condition Min Typ Max Unit Static Characteristics Drain-Source Breakdown Voltage BVDSS ID = 250A, VGS = 0V 660 - - V Gate Threshold Voltage VGS(th) - 2.0 4.0 VDS = VGS, ID = 250A Drain Cut-Off Current IDSS VDS = 650V, VGS = 0V 1.0 - - A VGS = 30V, VDS = 0V - 0.1 Gate Leakage Current

7.2. Size:910K cn fx-semi
fxn5n65fm.pdf pdf_icon

FuXin Semiconductor Co., Ltd.Rev.AFXN5N65FMFeaturesGeneral DescriptionVDS = 650VThe FXN5N65FM uses advanced Silicons MOSFET Technology,which provides high performance in on-state resistance, ID = 5A @VGS = 10Vfast switching performance, and excellent quality. Very low on-resistanceRDS(ON)

Datasheet: FXN7N65F , FXN8N60F , FXN8N65D , FXN8N65F , FXN10N06D , FXN10N50F , FXN10N65F , FXN10N80F , BS170 , FXN5N65F , FXN5N65FM , FXN65S55T , FXN07N10NS , FXN0808C , FXN08S65D , FXN09150C , FXN4607F .