FXN13N45F MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FXN13N45F
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 63 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 450 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 10.4 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 12 nS
Cossⓘ - Capacitancia de salida: 150 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.42 Ohm
Paquete / Cubierta: TO220F
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FXN13N45F Datasheet (PDF)
fxn13n45f.pdf

FuXin Semiconductor Co., Ltd. FXN13N45F Series Rev.A General Description Features The FXN13N45F uses advanced Silicon s MOSFET Technology, which V = 450V DSprovides high performance in on-state resistance, fast switching ID = 13A @V = 10V GSperformance, and excellent quality. Very low on-resistance These devices can also be utilized in in
fxn13n50c.pdf

FuXin Semiconductor Co., Ltd. FXN13N50C Series Rev.A General Description Features The FXN13N50C uses advanced Silicon s MOSFET Technology, which VDS = 500V provides high performance in on-state resistance, fast switching ID = 13A @VGS = 10V performance, and excellent quality. Very low on-resistance These devices can also be utilized in indust
fxn13n50k.pdf

FuXin Semiconductor Co., Ltd.FXN13N50K Series Rev.AGeneral Description FeaturesThe FXN13N50K uses advanced Silicon s MOSFET Technology, whichV = 500VDSprovides high performance in on-state resistance, fast switchingID = 15A @V = 10VGSperformance, and excellent quality.Very low on-resistanceThese devices can also be utilized in industrial a
Otros transistores... FXN11N45F , FXN12N60FS , FXN12N65F , FXN12S65F , FXN32N55T , FXN40N03C , FXN40N03H , FXN40N20C , IRFB4227 , FXN13N50C , FXN13N50K , FXN15N06D , FXN30S55C , FXN30S55F , FXN30S60F , FXN30S60T , FXN20S60F .



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