FXN13N45F Datasheet. Specs and Replacement

Type Designator: FXN13N45F  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 63 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 450 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 10.4 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 12 nS

Cossⓘ - Output Capacitance: 150 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.42 Ohm

Package: TO220F

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FXN13N45F datasheet

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FXN13N45F

FuXin Semiconductor Co., Ltd. FXN13N45F Series Rev.A General Description Features The FXN13N45F uses advanced Silicon s MOSFET Technology, which V = 450V DS provides high performance in on-state resistance, fast switching ID = 13A @V = 10V GS performance, and excellent quality. Very low on-resistance These devices can also be utilized in in... See More ⇒

 8.1. Size:406K  cn fx-semi
 fxn13n50c.pdf pdf_icon

FXN13N45F

FuXin Semiconductor Co., Ltd. FXN13N50C Series Rev.A General Description Features The FXN13N50C uses advanced Silicon s MOSFET Technology, which VDS = 500V provides high performance in on-state resistance, fast switching ID = 13A @VGS = 10V performance, and excellent quality. Very low on-resistance These devices can also be utilized in indust... See More ⇒

 8.2. Size:482K  cn fx-semi
 fxn13n50k.pdf pdf_icon

FXN13N45F

FuXin Semiconductor Co., Ltd. FXN13N50K Series Rev.A General Description Features The FXN13N50K uses advanced Silicon s MOSFET Technology, which V = 500V DS provides high performance in on-state resistance, fast switching ID = 15A @V = 10V GS performance, and excellent quality. Very low on-resistance These devices can also be utilized in industrial a... See More ⇒

Detailed specifications: FXN11N45F, FXN12N60FS, FXN12N65F, FXN12S65F, FXN32N55T, FXN40N03C, FXN40N03H, FXN40N20C, IRF3710, FXN13N50C, FXN13N50K, FXN15N06D, FXN30S55C, FXN30S55F, FXN30S60F, FXN30S60T, FXN20S60F

Keywords - FXN13N45F MOSFET specs

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