FDH50N50 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FDH50N50
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 625 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 500 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 48 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 5 VQgⓘ - Carga de la puerta: 105 nC
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.105 Ohm
Paquete / Cubierta: TO247
Búsqueda de reemplazo de MOSFET FDH50N50
Principales características: FDH50N50
fdh50n50 f133 fda50n50.pdf
October 2008 TM UniFET FDH50N50_F133 / FDA50N50 500V N-Channel MOSFET Features Description 48A, 500V, RDS(on) = 0.105 @VGS = 10 V These N-Channel enhancement mode power field effect transis- tors are produced using Fairchild s proprietary, planar stripe, Low gate charge ( typical 105 nC) DMOS technology. Low Crss ( typical 45 pF) This advanced technology has been es
fdh50n50 f133.pdf
February 2012 TM UniFET FDH50N50_F133 / FDA50N50 500V N-Channel MOSFET Features Description 48A, 500V, RDS(on) = 0.105 @VGS = 10 V These N-Channel enhancement mode power field effect transis- tors are produced using Fairchild s proprietary, planar stripe, Low gate charge ( typical 105 nC) DMOS technology. Low Crss ( typical 45 pF) This advanced technology has been e
fdh50n50.pdf
May 2014 FDH50N50 / FDA50N50 N-Channel UniFETTM MOSFET 500 V, 48 A, 105 m Features Description RDS(on) = 89 m (Typ.) @ VGS = 10 V, ID = 24 A UniFETTM MOSFET is Fairchild Semiconductor s high voltage MOSFET family based on planar stripe and DMOS technology. Low Gate Charge (Typ. 105 nC) This MOSFET is tailored to reduce on-state resistance, and to Low Crss (Typ. 45
fdh50n50 fda50n50.pdf
TM UniFET FDH50N50 / FDA50N50 500V N-Channel MOSFET Features Description 48A, 500V, RDS(on) = 0.105 @VGS = 10 V These N-Channel enhancement mode power field effect transis- tors are produced using Fairchild s proprietary, planar stripe, Low gate charge ( typical 105 nC) DMOS technology. Low Crss ( typical 45 pF) This advanced technology has been especially tailored t
Otros transistores... FQPF5N90 , FQPF5P20 , FQPF630 , FDMC8296 , FQPF65N06 , FQPF6N80C , FDMS8880 , FQPF6N80T , 2SK3568 , FQPF6N90C , FQPF70N10 , FDH45N50F , FQPF7N60 , FDN5632NF085 , FQPF7N65C , FQPF7N80C , FDD16AN08F085 .
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