FDH50N50 Datasheet. Specs and Replacement

Type Designator: FDH50N50  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 625 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 48 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.105 Ohm

Package: TO247

  📄📄 Copy 

FDH50N50 substitution

- MOSFET ⓘ Cross-Reference Search

 

FDH50N50 datasheet

 ..1. Size:540K  fairchild semi
 fdh50n50 f133 fda50n50.pdf pdf_icon

FDH50N50

October 2008 TM UniFET FDH50N50_F133 / FDA50N50 500V N-Channel MOSFET Features Description 48A, 500V, RDS(on) = 0.105 @VGS = 10 V These N-Channel enhancement mode power field effect transis- tors are produced using Fairchild s proprietary, planar stripe, Low gate charge ( typical 105 nC) DMOS technology. Low Crss ( typical 45 pF) This advanced technology has been es... See More ⇒

 ..2. Size:545K  fairchild semi
 fdh50n50 f133.pdf pdf_icon

FDH50N50

February 2012 TM UniFET FDH50N50_F133 / FDA50N50 500V N-Channel MOSFET Features Description 48A, 500V, RDS(on) = 0.105 @VGS = 10 V These N-Channel enhancement mode power field effect transis- tors are produced using Fairchild s proprietary, planar stripe, Low gate charge ( typical 105 nC) DMOS technology. Low Crss ( typical 45 pF) This advanced technology has been e... See More ⇒

 ..3. Size:1195K  fairchild semi
 fdh50n50.pdf pdf_icon

FDH50N50

May 2014 FDH50N50 / FDA50N50 N-Channel UniFETTM MOSFET 500 V, 48 A, 105 m Features Description RDS(on) = 89 m (Typ.) @ VGS = 10 V, ID = 24 A UniFETTM MOSFET is Fairchild Semiconductor s high voltage MOSFET family based on planar stripe and DMOS technology. Low Gate Charge (Typ. 105 nC) This MOSFET is tailored to reduce on-state resistance, and to Low Crss (Typ. 45... See More ⇒

 ..4. Size:223K  onsemi
 fdh50n50 fda50n50.pdf pdf_icon

FDH50N50

TM UniFET FDH50N50 / FDA50N50 500V N-Channel MOSFET Features Description 48A, 500V, RDS(on) = 0.105 @VGS = 10 V These N-Channel enhancement mode power field effect transis- tors are produced using Fairchild s proprietary, planar stripe, Low gate charge ( typical 105 nC) DMOS technology. Low Crss ( typical 45 pF) This advanced technology has been especially tailored t... See More ⇒

SHOW MORE

Detailed specifications: FQPF5N90, FQPF5P20, FQPF630, FDMC8296, FQPF65N06, FQPF6N80C, FDMS8880, FQPF6N80T, IRF1407, FQPF6N90C, FQPF70N10, FDH45N50F, FQPF7N60, FDN5632NF085, FQPF7N65C, FQPF7N80C, FDD16AN08F085

Keywords - FDH50N50 MOSFET specs

 FDH50N50 cross reference

 FDH50N50 equivalent finder

 FDH50N50 pdf lookup

 FDH50N50 substitution

 FDH50N50 replacement

Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility