FXN15N06D MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FXN15N06D

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 56 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 39 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 21 nS

Cossⓘ - Capacitancia de salida: 246 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.016 Ohm

Encapsulados: TO252

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FXN15N06D datasheet

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 fxn15n06d.pdf pdf_icon

FXN15N06D

FuXin Semiconductor Co., Ltd. FXN15N06D Series Rev.A General Description Features The FXN15N06D uses advanced Silicon s MOSFET Technology, whic VDS = 60V h ID = 45A @VGS = 10V provides high performance in on-state resistance, fast switching Very low on-resistance performance, and excellent quality. RDS(ON)

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 fxn15n50f.pdf pdf_icon

FXN15N06D

FuXin Semiconductor Co., Ltd. FXN15N50F Series Rev.A General Description Features The FXN15N50F uses advanced Silicon s MOSFET Technology, which V = 500V DS provides high performance in on-state resistance, fast switching ID = 15A @V = 10V GS performance, and excellent quality. Very low on-resistance These devices can also be utilized in industrial a

 9.1. Size:450K  cn fx-semi
 fxn15s50f.pdf pdf_icon

FXN15N06D

FuXin Semiconductor Co., Ltd. FXN15S50F Series Rev.A General Description Features The FXN15S50F uses advanced Cool MOSFET Technology, which V = 500V DS provides high performance in on-state resistance, fast switching ID = 15A @V = 10V GS performance, and excellent quality. Very low on-resistance These devices can also be utilized in industrial application

Otros transistores... FXN12S65F, FXN32N55T, FXN40N03C, FXN40N03H, FXN40N20C, FXN13N45F, FXN13N50C, FXN13N50K, 2N7000, FXN30S55C, FXN30S55F, FXN30S60F, FXN30S60T, FXN20S60F, FXN23S65F, FXN25N50F, FXN25S55GF