FXN15N06D Datasheet. Specs and Replacement

Type Designator: FXN15N06D  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 56 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 39 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 21 nS

Cossⓘ - Output Capacitance: 246 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.016 Ohm

Package: TO252

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FXN15N06D datasheet

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FXN15N06D

FuXin Semiconductor Co., Ltd. FXN15N06D Series Rev.A General Description Features The FXN15N06D uses advanced Silicon s MOSFET Technology, whic VDS = 60V h ID = 45A @VGS = 10V provides high performance in on-state resistance, fast switching Very low on-resistance performance, and excellent quality. RDS(ON) ... See More ⇒

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FXN15N06D

FuXin Semiconductor Co., Ltd. FXN15N50F Series Rev.A General Description Features The FXN15N50F uses advanced Silicon s MOSFET Technology, which V = 500V DS provides high performance in on-state resistance, fast switching ID = 15A @V = 10V GS performance, and excellent quality. Very low on-resistance These devices can also be utilized in industrial a... See More ⇒

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FXN15N06D

FuXin Semiconductor Co., Ltd. FXN15S50F Series Rev.A General Description Features The FXN15S50F uses advanced Cool MOSFET Technology, which V = 500V DS provides high performance in on-state resistance, fast switching ID = 15A @V = 10V GS performance, and excellent quality. Very low on-resistance These devices can also be utilized in industrial application... See More ⇒

Detailed specifications: FXN12S65F, FXN32N55T, FXN40N03C, FXN40N03H, FXN40N20C, FXN13N45F, FXN13N50C, FXN13N50K, IRFB4227, FXN30S55C, FXN30S55F, FXN30S60F, FXN30S60T, FXN20S60F, FXN23S65F, FXN25N50F, FXN25S55GF

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