FXN30S55F MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FXN30S55F
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 49 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 550 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 23 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 74 nS
Cossⓘ - Capacitancia de salida: 72 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.11 Ohm
Paquete / Cubierta: TO220F
Búsqueda de reemplazo de FXN30S55F MOSFET
FXN30S55F Datasheet (PDF)
fxn30s55f.pdf

FuXin Semiconductor Co., Ltd. FXN3 0S55F Series Rev.AGeneral Description Features The FXN30S55F uses advanced Silicon s MOSFET Technology, which V = 550V DSprovides high performance in on-state resistance, fast switching ID =30A @V = 10V GSperformance, and excellent quality. Very low on-resistance These devices can also be utilized in ind
fxn30s55c.pdf

FuXin Semiconductor Co., Ltd. FXN30S55C Series Rev.AGeneral Description Features The FXN30S55C uses advanced Silicon s MOSFET Technology, which V = 550V DSprovides high performance in on-state resistance, fast switching ID =30A @V = 10V GSperformance, and excellent quality. Very low on-resistance These devices can also be utilized in indu
fxn30s60t.pdf

FuXin Semiconductor Co., Ltd. FXN30S60T Series ReV.AGeneral Description Features The FXN30S60T uses adVanced Silicon s MOSFET Technology, which V = 600V DSproVides high performance in on-state resistance, fast switching ID =30A @V = 10V GSperformance, and excellent quality. Very low on-resistance These deVices can also be utilized in indu
fxn30s60f.pdf

FuXin Semiconductor Co., Ltd. FXN30S60F Series ReV.AGeneral Description Features The FXN30S60F uses adVanced Silicon s MOSFET Technology, which V = 600V DSproVides high performance in on-state resistance, fast switching ID =30A @V = 10V GSperformance, and excellent quality. Very low on-resistance These deVices can also be utilized in indu
Otros transistores... FXN40N03C , FXN40N03H , FXN40N20C , FXN13N45F , FXN13N50C , FXN13N50K , FXN15N06D , FXN30S55C , 2SK3878 , FXN30S60F , FXN30S60T , FXN20S60F , FXN23S65F , FXN25N50F , FXN25S55GF , FXN28N50F , FXN28N50P .
History: PV501BA | IRFY9140CM
History: PV501BA | IRFY9140CM



Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: JMTP330N06D | JMTP3010D | JMTP3008A | JMTP260N03D | JMTP250P03A | JMTP240N03D | JMTP240C03D | JMTP230C04D | JMTP170N06D | JMTP170N06A | JMTP170C04D | JMTP160P03D | JMTP130P04A | JMTP130N04A | JMTP120C03D | JMTL3134KT7
Popular searches
2sc381 | datasheet mosfet | 2sk2586 | 13005 transistor | ecg123a | irfp360 | bc108 equivalent | irfp4568