FXN30S55F Specs and Replacement

Type Designator: FXN30S55F

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 49 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 550 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 23 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 74 nS

Cossⓘ - Output Capacitance: 72 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.11 Ohm

Package: TO220F

FXN30S55F substitution

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FXN30S55F datasheet

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FXN30S55F

FuXin Semiconductor Co., Ltd. FXN3 0S55F Series Rev.A General Description Features The FXN30S55F uses advanced Silicon s MOSFET Technology, which V = 550V DS provides high performance in on-state resistance, fast switching ID =30A @V = 10V GS performance, and excellent quality. Very low on-resistance These devices can also be utilized in ind... See More ⇒

 6.1. Size:787K  cn fx-semi
 fxn30s55c.pdf pdf_icon

FXN30S55F

FuXin Semiconductor Co., Ltd. FXN30S55C Series Rev.A General Description Features The FXN30S55C uses advanced Silicon s MOSFET Technology, which V = 550V DS provides high performance in on-state resistance, fast switching ID =30A @V = 10V GS performance, and excellent quality. Very low on-resistance These devices can also be utilized in indu... See More ⇒

 8.1. Size:901K  cn fx-semi
 fxn30s60t.pdf pdf_icon

FXN30S55F

FuXin Semiconductor Co., Ltd. FXN30S60T Series ReV.A General Description Features The FXN30S60T uses adVanced Silicon s MOSFET Technology, which V = 600V DS proVides high performance in on-state resistance, fast switching ID =30A @V = 10V GS performance, and excellent quality. Very low on-resistance These deVices can also be utilized in indu... See More ⇒

 8.2. Size:563K  cn fx-semi
 fxn30s60f.pdf pdf_icon

FXN30S55F

FuXin Semiconductor Co., Ltd. FXN30S60F Series ReV.A General Description Features The FXN30S60F uses adVanced Silicon s MOSFET Technology, which V = 600V DS proVides high performance in on-state resistance, fast switching ID =30A @V = 10V GS performance, and excellent quality. Very low on-resistance These deVices can also be utilized in indu... See More ⇒

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Detailed specifications: FXN40N03C, FXN40N03H, FXN40N20C, FXN13N45F, FXN13N50C, FXN13N50K, FXN15N06D, FXN30S55C, 8205A, FXN30S60F, FXN30S60T, FXN20S60F, FXN23S65F, FXN25N50F, FXN25S55GF, FXN28N50F, FXN28N50P

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.