FXN28N50T Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FXN28N50T  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 108 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 500 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 23 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 38 nS

Cossⓘ - Capacitancia de salida: 1420 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.2 Ohm

Encapsulados: TO247

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FXN28N50T datasheet

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FXN28N50T

FuXin Semiconductor Co., Ltd. FXN28N50T Series Rev.A General Description Features The FXN28N50T uses advanced Silicon s MOSFET Technology, which V = 500V DS provides high performance in on-state resistance, fast switching ID =28A @V = 10V GS performance, and excellent quality. Very low on-resistance These devices can also be utilized in indust

 6.1. Size:869K  cn fx-semi
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FXN28N50T

FuXin Semiconductor Co., Ltd. FXN28N50P Series Rev.A General Description Features The FXN28N50P uses advanced Silicon s MOSFET Technology, which V = 500V DS provides high performance in on-state resistance, fast switching ID =28A @V = 10V GS performance, and excellent quality. Very low on-resistance These devices can also be utilized in indu

 6.2. Size:916K  cn fx-semi
 fxn28n50f.pdf pdf_icon

FXN28N50T

FuXin Semiconductor Co., Ltd. FXN28N50F Series Rev.A General Description Features The FXN28N50F uses advanced Silicon s MOSFET Technology, which V = 500V DS provides high performance in on-state resistance, fast switching ID =28A @V = 10V GS performance, and excellent quality. Very low on-resistance These devices can also be utilized in indu

 9.1. Size:686K  cn fx-semi
 fxn28s50f.pdf pdf_icon

FXN28N50T

FuXin Semiconductor Co., Ltd. FXN28S50F Series Rev.A General Description Features The FXN28S50F uses advanced Silicon s MOSFET Technology, which V = 500V DS provides high performance in on-state resistance, fast switching ID =28A @V = 10V GS performance, and excellent quality. Very low on-resistance These devices can also be utilized in indu

MOSTRAR MÁS

Otros transistores... FXN30S60F, FXN30S60T, FXN20S60F, FXN23S65F, FXN25N50F, FXN25S55GF, FXN28N50F, FXN28N50P, IRF1010E, FXN28S50F, FXN15N50F, FXN2N60D, FXN30N50F, FXN30N50T, FXN9N40C, FXN4N60D, FXN4N65D