Справочник MOSFET. FXN28N50T

 

FXN28N50T Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: FXN28N50T
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 108 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 500 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 23 A
   Tj ⓘ - Максимальная температура канала: 175 °C
   Qg ⓘ - Общий заряд затвора: 80 nC
   tr ⓘ - Время нарастания: 38 ns
   Cossⓘ - Выходная емкость: 1420 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.2 Ohm
   Тип корпуса: TO247
 

 Аналог (замена) для FXN28N50T

   - подбор ⓘ MOSFET транзистора по параметрам

 

FXN28N50T Datasheet (PDF)

 ..1. Size:1061K  cn fx-semi
 fxn28n50t.pdf pdf_icon

FXN28N50T

FuXin Semiconductor Co., Ltd.FXN28N50T Series Rev.AGeneral Description Features The FXN28N50T uses advanced Silicon s MOSFET Technology, which V = 500V DSprovides high performance in on-state resistance, fast switching ID =28A @V = 10V GSperformance, and excellent quality. Very low on-resistance These devices can also be utilized in indust

 6.1. Size:869K  cn fx-semi
 fxn28n50p.pdf pdf_icon

FXN28N50T

FuXin Semiconductor Co., Ltd. FXN28N50P Series Rev.AGeneral Description Features The FXN28N50P uses advanced Silicon s MOSFET Technology, which V = 500V DSprovides high performance in on-state resistance, fast switching ID =28A @V = 10V GSperformance, and excellent quality. Very low on-resistance These devices can also be utilized in indu

 6.2. Size:916K  cn fx-semi
 fxn28n50f.pdf pdf_icon

FXN28N50T

FuXin Semiconductor Co., Ltd. FXN28N50F Series Rev.AGeneral Description Features The FXN28N50F uses advanced Silicon s MOSFET Technology, which V = 500V DSprovides high performance in on-state resistance, fast switching ID =28A @V = 10V GSperformance, and excellent quality. Very low on-resistance These devices can also be utilized in indu

 9.1. Size:686K  cn fx-semi
 fxn28s50f.pdf pdf_icon

FXN28N50T

FuXin Semiconductor Co., Ltd. FXN28S50F Series Rev.AGeneral Description Features The FXN28S50F uses advanced Silicon s MOSFET Technology, which V = 500V DSprovides high performance in on-state resistance, fast switching ID =28A @V = 10V GSperformance, and excellent quality. Very low on-resistance These devices can also be utilized in indu

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History: FDD8870

 

 
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