FXN100S55T Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FXN100S55T  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 545 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 550 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 92 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 34 nS

Cossⓘ - Capacitancia de salida: 240 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.025 Ohm

Encapsulados: TO247

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FXN100S55T datasheet

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FXN100S55T

FuXin Semiconductor Co., Ltd. FXN100S55T Series Rev.A General Description Features The FXN100S55T uses advanced Silicon sCooL MOSFET Technology, which VDS = 550V provides high performance in on-state resistance, fast switching ID =100A @VGS = 10V performance, and excellent quality. Very low on-resistance These devices can also be utilized in industrial

 9.1. Size:960K  cn fx-semi
 fxn10n50f.pdf pdf_icon

FXN100S55T

FuXin Semiconductor Co., Ltd. FXN10N50F Series Rev.A General Description Features The 10N50Fuses advanced Silicon s MOSFET T echnology, which FXN VDS = 500V provides high performance in on-state resistance, fast switching ID = 10A @VGS = 10V performance, and excellent quality. Very low on-resistance These devices can also be utilized in indust

 9.2. Size:734K  cn fx-semi
 fxn10n65f.pdf pdf_icon

FXN100S55T

FuXin Semiconductor Co., Ltd. FXN10N65F Series Rev.A General Description Features The FXN10N65F uses advanced Silicon s MOSFET Technology, which V = 650V DS provides high performance in on-state resistance, fast switching ID = 10A @V = 10V GS performance, and excellent quality. Very low on-resistance These devices can also be utilized in in

 9.3. Size:478K  cn fx-semi
 fxn10n80f.pdf pdf_icon

FXN100S55T

FuXin Semiconductor Co., Ltd. FXN10N80F Series Rev.A General Description Features The FXN10N80F uses advanced Silicon s MOSFET Technology, which V = 800V DS provides high performance in on-state resistance, fast switching ID = 10A @V = 10V GS performance, and excellent quality. Very low on-resistance These devices can also be utilized in industrial a

MOSTRAR MÁS

Otros transistores... FXN9N40C, FXN4N60D, FXN4N65D, FXN7N65D, CRJQ99N65G2, LSD07N80A-VB, FXN0204C, FXN0204CQ, IRFB3607, FXN9N20C, 630, 110N04, 13N90, 14N65, 18N50D, D2N60, D4N70