All MOSFET. FXN100S55T Datasheet

 

FXN100S55T Datasheet and Replacement


   Type Designator: FXN100S55T
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 545 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 550 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 92 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 125 nC
   trⓘ - Rise Time: 34 nS
   Cossⓘ - Output Capacitance: 240 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm
   Package: TO247
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FXN100S55T Datasheet (PDF)

 ..1. Size:429K  cn fx-semi
fxn100s55t.pdf pdf_icon

FXN100S55T

FuXin Semiconductor Co., Ltd.FXN100S55T Series Rev.AGeneral Description FeaturesThe FXN100S55T uses advanced Silicon sCooL MOSFET Technology, whichVDS = 550Vprovides high performance in on-state resistance, fast switchingID =100A @VGS = 10Vperformance, and excellent quality.Very low on-resistanceThese devices can also be utilized in industrial

 9.1. Size:960K  cn fx-semi
fxn10n50f.pdf pdf_icon

FXN100S55T

FuXin Semiconductor Co., Ltd. FXN10N50F Series Rev.AGeneral Description Features The 10N50Fuses advanced Silicon s MOSFET T echnology, which FXN VDS = 500V provides high performance in on-state resistance, fast switching ID = 10A @VGS = 10V performance, and excellent quality. Very low on-resistance These devices can also be utilized in indust

 9.2. Size:734K  cn fx-semi
fxn10n65f.pdf pdf_icon

FXN100S55T

FuXin Semiconductor Co., Ltd. FXN10N65F Series Rev.A General Description Features The FXN10N65F uses advanced Silicon s MOSFET Technology, which V = 650V DSprovides high performance in on-state resistance, fast switching ID = 10A @V = 10V GSperformance, and excellent quality. Very low on-resistance These devices can also be utilized in in

 9.3. Size:478K  cn fx-semi
fxn10n80f.pdf pdf_icon

FXN100S55T

FuXin Semiconductor Co., Ltd.FXN10N80F Series Rev.AGeneral Description FeaturesThe FXN10N80F uses advanced Silicon s MOSFET Technology, whichV = 800VDSprovides high performance in on-state resistance, fast switchingID = 10A @V = 10VGSperformance, and excellent quality.Very low on-resistanceThese devices can also be utilized in industrial a

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

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