FXN100S55T MOSFET Datasheet: N-Ch, 550V, 92A. Full specification with pinout and replacement list

FXN100S55T Specs and Replacement

Type Designator: FXN100S55T

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 545 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 550 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 92 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 34 nS

Cossⓘ - Output Capacitance: 240 pF

Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm

Package: TO247

FXN100S55T substitution

- MOSFET ⓘ Cross-Reference Search

FXN100S55T datasheet

..1. Size:429K cn fx-semi
fxn100s55t.pdf pdf_icon

FuXin Semiconductor Co., Ltd. FXN100S55T Series Rev.A General Description Features The FXN100S55T uses advanced Silicon sCooL MOSFET Technology, which VDS = 550V provides high performance in on-state resistance, fast switching ID =100A @VGS = 10V performance, and excellent quality. Very low on-resistance These devices can also be utilized in industrial... See More ⇒

9.1. Size:960K cn fx-semi
fxn10n50f.pdf pdf_icon

FuXin Semiconductor Co., Ltd. FXN10N50F Series Rev.A General Description Features The 10N50Fuses advanced Silicon s MOSFET T echnology, which FXN VDS = 500V provides high performance in on-state resistance, fast switching ID = 10A @VGS = 10V performance, and excellent quality. Very low on-resistance These devices can also be utilized in indust... See More ⇒

9.2. Size:734K cn fx-semi
fxn10n65f.pdf pdf_icon

FuXin Semiconductor Co., Ltd. FXN10N65F Series Rev.A General Description Features The FXN10N65F uses advanced Silicon s MOSFET Technology, which V = 650V DS provides high performance in on-state resistance, fast switching ID = 10A @V = 10V GS performance, and excellent quality. Very low on-resistance These devices can also be utilized in in... See More ⇒

9.3. Size:478K cn fx-semi
fxn10n80f.pdf pdf_icon

FuXin Semiconductor Co., Ltd. FXN10N80F Series Rev.A General Description Features The FXN10N80F uses advanced Silicon s MOSFET Technology, which V = 800V DS provides high performance in on-state resistance, fast switching ID = 10A @V = 10V GS performance, and excellent quality. Very low on-resistance These devices can also be utilized in industrial a... See More ⇒