D4N70 Todos los transistores

 

D4N70 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: D4N70
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 75 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 700 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 4 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 12.7 nC
   trⓘ - Tiempo de subida: 15 nS
   Cossⓘ - Capacitancia de salida: 48 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 3.1 Ohm
   Paquete / Cubierta: TO252
     - Selección de transistores por parámetros

 

D4N70 Datasheet (PDF)

 ..1. Size:1003K  cn wxdh
d4n70.pdf pdf_icon

D4N70

D4N704A 700V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhanced vdmosfets, is obtained by the self-alignedVDSS = 700Vplanar technology which reduce the conduction loss, improve switchingI = 4.0ADperformance and enhance the avalanche energy. Which accords with theRoHS standard.RDS(on)TYP)= 2.552 Features Fast switching ESD impr

 0.1. Size:808K  blue-rocket-elect
brd4n70.pdf pdf_icon

D4N70

BRD4N70 Rev.E May.-2016 DATA SHEET / Descriptions TO-252 N MOS N-CHANNEL MOSFET in a TO-252 Plastic Package. / Features ,,Low gate charge, low crss, fast switching. / Applications These devices are well suited for po

 0.2. Size:875K  bruckewell
msd4n70.pdf pdf_icon

D4N70

MSD4N70 700V N-Channel MOSFET Description The MSD4N70 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-252 package is universally preferred for all commercial-industrial applications Features Originative New Design 100% EAS Test

 0.3. Size:1038K  samwin
sw4n70d swi4n70d swn4n70d swd4n70d swf4n70d.pdf pdf_icon

D4N70

SW4N70D N-channel Enhanced mode TO-251/TO-251N/TO-252/TO-220F MOSFET Features BVDSS : 700V TO-251 TO-251N TO-252 TO-220F ID : 4A High ruggedness Low RDS(ON) (Typ 2.3)@VGS=10V RDS(ON) : 2.3 Low Gate Charge (Typ 20nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 Application:Charger,LED 1 1 2 2 2 2 3 3 3 3 1 1. Gate 2.

Otros transistores... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

 

 
Back to Top

 


D4N70
  D4N70
  D4N70
 

social 

Liste

Recientemente añadidas las descripciónes de los transistores:

MOSFET: DH019N04E | DH019N04D | DH019N04B | DH019N04 | DH0159I | DH0159F | DH0159E | DH0159D | DH0159B | DH0159 | D5N50 | D50N06 | D4N80 | D4N70 | D2N60 | 18N50D

 

 

 
Back to Top

 

 


 
.