D4N70 Datasheet. Specs and Replacement
Type Designator: D4N70 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 75 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 48 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 3.1 Ohm
Package: TO252
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D4N70 substitution
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D4N70 datasheet
d4n70.pdf
D4N70 4A 700V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhanced vdmosfets, is obtained by the self-aligned V DSS = 700V planar technology which reduce the conduction loss, improve switching I = 4.0A D performance and enhance the avalanche energy. Which accords with the RoHS standard. R DS(on) TYP) = 2.55 2 Features Fast switching ESD impr... See More ⇒
brd4n70.pdf
BRD4N70 Rev.E May.-2016 DATA SHEET / Descriptions TO-252 N MOS N-CHANNEL MOSFET in a TO-252 Plastic Package. / Features , , Low gate charge, low crss, fast switching. / Applications These devices are well suited for po... See More ⇒
sw4n70d swi4n70d swn4n70d swd4n70d swf4n70d.pdf
SW4N70D N-channel Enhanced mode TO-251/TO-251N/TO-252/TO-220F MOSFET Features BVDSS 700V TO-251 TO-251N TO-252 TO-220F ID 4A High ruggedness Low RDS(ON) (Typ 2.3 )@VGS=10V RDS(ON) 2.3 Low Gate Charge (Typ 20nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 Application Charger,LED 1 1 2 2 2 2 3 3 3 3 1 1. Gate 2. ... See More ⇒
Detailed specifications: FXN100S55T, FXN9N20C, 630, 110N04, 13N90, 14N65, 18N50D, D2N60, NCEP15T14, D4N80, D50N06, D5N50, DH0159, DH0159B, DH0159D, DH0159E, DH0159F
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
MOSFET Parameters. How They Affect Each Other
History: DH0159F | 630
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