DH012N03P Todos los transistores

 

DH012N03P MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: DH012N03P
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 180 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 100 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 140 nS
   Cossⓘ - Capacitancia de salida: 1266 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0015 Ohm
   Paquete / Cubierta: DFN5X6-8
 

 Búsqueda de reemplazo de DH012N03P MOSFET

   - Selección ⓘ de transistores por parámetros

 

DH012N03P Datasheet (PDF)

 ..1. Size:790K  cn wxdh
dh012n03p.pdf pdf_icon

DH012N03P

DH012N03P100A 30V N-channel Enhancement Mode Power MOSFET1 DescriptionThis N-channel enhancement mode power mosfets usedV = 30VDSS2 Dadvanced trench technology design, provided excellentRdson and low gate charge. Which accords with the RoHS R = 1.2mDS(on) (TYP)Gstandard.I Silicon limit= 256AD13 SI Package limit=100AD2 Features Low on resist

 6.1. Size:888K  cn wxdh
dh012n03u.pdf pdf_icon

DH012N03P

DH012N03U235A 30V N-channel Enhancement Mode Power MOSFET1 DescriptionThis N-channel enhancement mode power mosfets used2 Dadvanced trench technology design, provided excellentV =30VDSSRdson and low gate charge. Which accords with the RoHSGR =1.15mDS(on) (TYP)standard.13 SI =235AD2 Features Low on resistance Low gate charge Fast switching

 6.2. Size:1133K  cn wxdh
dh012n03 dh012n03f dh012n03i dh012n03e dh012n03b dh012n03d.pdf pdf_icon

DH012N03P

DH012N03/DH012N03F/DH012N03I/DH012N03E/DH012N03B/DH012N03D320A 30V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV = 30VDSSadvanced trench technology design, provided excellentRdson and low gate charge. Which accords with the RoHSGR = 1.5mDS(on) (TYP)standard.13 SI = 320AD2 Features Low on res

Otros transistores... B110N04 , HYG035N10NS2P , HYG035N10NS2B , JMTE070N07A , DH012N03D , DH012N03E , DH012N03F , DH012N03I , 60N06 , DH012N03U , DH019N04F , DH019N04I , DH020N03 , DH020N03B , DH020N03D , DH020N03E , B25N10 .

History: IRFR9110 | MTC4503LQ8 | AOB9N70 | NTPF082N65S3F | SSB80R160SFD | SSF90R240S2 | FQD8P10TM-F085

 

 
Back to Top

 


 
.