DH012N03P - описание и поиск аналогов

 

DH012N03P. Аналоги и основные параметры

Наименование производителя: DH012N03P

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 180 W

|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V

|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 100 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 140 ns

Cossⓘ - Выходная емкость: 1266 pf

Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0015 Ohm

Тип корпуса: DFN5X6-8

Аналог (замена) для DH012N03P

  - подбор ⓘ MOSFET транзистора по параметрам

 

DH012N03P даташит

 ..1. Size:790K  cn wxdh
 dh012n03p.pdf pdf_icon

DH012N03P

DH012N03P 100A 30V N-channel Enhancement Mode Power MOSFET 1 Description This N-channel enhancement mode power mosfets used V = 30V DSS 2 D advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS R = 1.2m DS(on) (TYP) G standard. I Silicon limit = 256A D 1 3 S I Package limit =100A D 2 Features Low on resist

 6.1. Size:888K  cn wxdh
 dh012n03u.pdf pdf_icon

DH012N03P

DH012N03U 235A 30V N-channel Enhancement Mode Power MOSFET 1 Description This N-channel enhancement mode power mosfets used 2 D advanced trench technology design, provided excellent V =30V DSS Rdson and low gate charge. Which accords with the RoHS G R =1.15m DS(on) (TYP) standard. 1 3 S I =235A D 2 Features Low on resistance Low gate charge Fast switching

 6.2. Size:1133K  cn wxdh
 dh012n03 dh012n03f dh012n03i dh012n03e dh012n03b dh012n03d.pdf pdf_icon

DH012N03P

DH012N03/DH012N03F/DH012N03I/ DH012N03E/DH012N03B/DH012N03D 320A 30V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V = 30V DSS advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS G R = 1.5m DS(on) (TYP) standard. 1 3 S I = 320A D 2 Features Low on res

Другие MOSFET... B110N04 , HYG035N10NS2P , HYG035N10NS2B , JMTE070N07A , DH012N03D , DH012N03E , DH012N03F , DH012N03I , IRLB3034 , DH012N03U , DH019N04F , DH019N04I , DH020N03 , DH020N03B , DH020N03D , DH020N03E , B25N10 .

 

 

 


 
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