B4N80 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

B4N804A 800V N-channel Enhancement Mode Power MOSFET1 DescriptionB4N80 , the silicon N-channel Enhanced VDMOSFETs, is obtained byVDSS = 800Vthe self-aligned planar Technology which reduce the conduction loss,I = 4.0ADimprove switching performance and enhance the avalanche energy. Thetransistor can be used in various power switching circuit for systemRDS(on)TYP)= 3.7

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTB4N80E/DDesigner's Data SheetMTB4N80ETMOS E-FET.Motorola Preferred DeviceHigh Energy Power FETD2PAK for Surface MountTMOS POWER FETNChannel EnhancementMode Silicon Gate 4.0 AMPERES800 VOLTSThe D2PAK package has the capability of housing a larger dieRDS(on) = 3.0 OHMthan any existing surface mou

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTB4N80E1/DProduct PreviewMTB4N80E1TMOS E-FET.Motorola Preferred DeviceHigh Energy Power FETD2PAK-SL Straight LeadTMOS POWER FETNChannel EnhancementMode Silicon Gate 4.0 AMPERES800 VOLTSThis high voltage MOSFET uses an advanced terminationRDS(on) = 3.0 OHMscheme to provide enhanced voltageblockin

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTB4N80E/DDesigner's Data SheetMTB4N80ETMOS E-FET.Motorola Preferred DeviceHigh Energy Power FETD2PAK for Surface MountTMOS POWER FETNChannel EnhancementMode Silicon Gate 4.0 AMPERES800 VOLTSThe D2PAK package has the capability of housing a larger dieRDS(on) = 3.0 OHMthan any existing surface mou

STB4NB80N - CHANNEL 800V - 3 - 4A - TO-220/TO-220FPPowerMESH MOSFETPRELIMINARY DATATYPE VDSS RDS(on) IDSTB4NB80 800 V 3.3 4 ASTB4NB80FP 800 V 3.3 4 A TYPICAL R = 3 DS(on) EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES3 GATE CHARGE MINIMIZED3211DESCRIPTION D2PAK I2PAKUsing the latest high voltage

October 2008QFETFQB4N80 / FQI4N80800V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 3.9A, 800V, RDS(on) = 3.6 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 19 nC)planar stripe, DMOS technology. Low Crss ( typical 8.6 pF)This advanced technology has been especially

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

LNC4N80/LND4N80/LNB4N80Lonten N-channel 800V, 4A Power MOSFETDescription Product SummaryThe Power MOSFET is fabricated using the V 800VDSSadvanced planer VDMOS technology. The I 4ADresulting device has low conduction resistance, R 3.8DS(on),maxsuperior switching performance and high avalanche Q 18.9 nCg,typenergy.Features Low RDS(on) Low gate charge (typ. Q

LNC4N80/LND4N80/LNB4N80/LNG4N80/LNH4N80Lonten N-channel 800V, 4A Power MOSFETDescription Product SummaryThe Power MOSFET is fabricated using the V 800VDSSadvanced planer VDMOS technology. The I 4ADresulting device has low conduction resistance, R 3.8DS(on),maxsuperior switching performance and high avalanche Q 18.9 nCg,typenergy.Features Low RDS(on) Low gat