B4N80 Todos los transistores

 ..1. Size:953K  cn wxdh
 b4n80.pdf

B4N80 4A 800V N-channel Enhancement Mode Power MOSFET 1 Description B4N80 , the silicon N-channel Enhanced VDMOSFETs, is obtained by V DSS = 800V the self-aligned planar Technology which reduce the conduction loss, I = 4.0A D improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system R DS(on) TYP) = 3.7

 0.1. Size:200K  motorola
 mtb4n80e.pdf

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTB4N80E/D Designer's Data Sheet MTB4N80E TMOS E-FET. Motorola Preferred Device High Energy Power FET D2PAK for Surface Mount TMOS POWER FET N Channel Enhancement Mode Silicon Gate 4.0 AMPERES 800 VOLTS The D2PAK package has the capability of housing a larger die RDS(on) = 3.0 OHM than any existing surface mou

 0.2. Size:160K  motorola
 mtb4n80e1rev0.pdf

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTB4N80E1/D Product Preview MTB4N80E1 TMOS E-FET. Motorola Preferred Device High Energy Power FET D2PAK-SL Straight Lead TMOS POWER FET N Channel Enhancement Mode Silicon Gate 4.0 AMPERES 800 VOLTS This high voltage MOSFET uses an advanced termination RDS(on) = 3.0 OHM scheme to provide enhanced voltage blockin

 0.3. Size:195K  motorola
 mtb4n80erev4.pdf

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTB4N80E/D Designer's Data Sheet MTB4N80E TMOS E-FET. Motorola Preferred Device High Energy Power FET D2PAK for Surface Mount TMOS POWER FET N Channel Enhancement Mode Silicon Gate 4.0 AMPERES 800 VOLTS The D2PAK package has the capability of housing a larger die RDS(on) = 3.0 OHM than any existing surface mou

 0.4. Size:52K  st
 stb4n80.pdf

STB4NB80 N - CHANNEL 800V - 3 - 4A - TO-220/TO-220FP PowerMESH MOSFET PRELIMINARY DATA TYPE VDSS RDS(on) ID STB4NB80 800 V 3.3 4 A STB4NB80FP 800 V 3.3 4 A TYPICAL R = 3 DS(on) EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES 3 GATE CHARGE MINIMIZED 3 2 1 1 DESCRIPTION D2PAK I2PAK Using the latest high voltage

 0.5. Size:8196K  fairchild semi
 fqb4n80 fqi4n80.pdf

October 2008 QFET FQB4N80 / FQI4N80 800V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 3.9A, 800V, RDS(on) = 3.6 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 19 nC) planar stripe, DMOS technology. Low Crss ( typical 8.6 pF) This advanced technology has been especially

 0.6. Size:968K  onsemi
 fqb4n80 fqi4n80.pdf

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 0.7. Size:1346K  lonten
 lnc4n80 lnd4n80 lnb4n80.pdf

LNC4N80/LND4N80/LNB4N80 Lonten N-channel 800V, 4A Power MOSFET Description Product Summary The Power MOSFET is fabricated using the V 800V DSS advanced planer VDMOS technology. The I 4A D resulting device has low conduction resistance, R 3.8 DS(on),max superior switching performance and high avalanche Q 18.9 nC g,typ energy. Features Low R DS(on) Low gate charge (typ. Q

 0.8. Size:1406K  lonten
 lnc4n80 lnd4n80 lnb4n80 lng4n80 lnh4n80.pdf

LNC4N80/LND4N80/LNB4N80/LNG4N80/LNH4N80 Lonten N-channel 800V, 4A Power MOSFET Description Product Summary The Power MOSFET is fabricated using the V 800V DSS advanced planer VDMOS technology. The I 4A D resulting device has low conduction resistance, R 3.8 DS(on),max superior switching performance and high avalanche Q 18.9 nC g,typ energy. Features Low R DS(on) Low gat