B4N80 Datasheet and Replacement
Type Designator: B4N80
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 150 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 4 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 17.3 nC
trⓘ - Rise Time: 9.5 nS
Cossⓘ - Output Capacitance: 48 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 4 Ohm
Package: TO251B
- MOSFET Cross-Reference Search
B4N80 Datasheet (PDF)
b4n80.pdf

B4N804A 800V N-channel Enhancement Mode Power MOSFET1 DescriptionB4N80 , the silicon N-channel Enhanced VDMOSFETs, is obtained byVDSS = 800Vthe self-aligned planar Technology which reduce the conduction loss,I = 4.0ADimprove switching performance and enhance the avalanche energy. Thetransistor can be used in various power switching circuit for systemRDS(on)TYP)= 3.7
mtb4n80e.pdf

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTB4N80E/DDesigner's Data SheetMTB4N80ETMOS E-FET.Motorola Preferred DeviceHigh Energy Power FETD2PAK for Surface MountTMOS POWER FETNChannel EnhancementMode Silicon Gate 4.0 AMPERES800 VOLTSThe D2PAK package has the capability of housing a larger dieRDS(on) = 3.0 OHMthan any existing surface mou
mtb4n80e1rev0.pdf

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTB4N80E1/DProduct PreviewMTB4N80E1TMOS E-FET.Motorola Preferred DeviceHigh Energy Power FETD2PAK-SL Straight LeadTMOS POWER FETNChannel EnhancementMode Silicon Gate 4.0 AMPERES800 VOLTSThis high voltage MOSFET uses an advanced terminationRDS(on) = 3.0 OHMscheme to provide enhanced voltageblockin
mtb4n80erev4.pdf

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTB4N80E/DDesigner's Data SheetMTB4N80ETMOS E-FET.Motorola Preferred DeviceHigh Energy Power FETD2PAK for Surface MountTMOS POWER FETNChannel EnhancementMode Silicon Gate 4.0 AMPERES800 VOLTSThe D2PAK package has the capability of housing a larger dieRDS(on) = 3.0 OHMthan any existing surface mou
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
Keywords - B4N80 MOSFET datasheet
B4N80 cross reference
B4N80 equivalent finder
B4N80 lookup
B4N80 substitution
B4N80 replacement



LIST
Last Update
MOSFET: DH012N03B | DH012N03 | DH009N02P | DH009N02I | DH009N02F | DH009N02E | DH009N02D | DH009N02B | DH009N02 | DATP057N06N | DATD063N06N | B80N06 | B7N70 | B740 | B640 | B630
Popular searches
mj50ac100 | 2sc1318 replacement | 2n3905 | mj15023 | tip36c transistor | 2sc3320 | 2sc2078 | ac127 transistor