All MOSFET. B4N80 Datasheet

 

B4N80 Datasheet and Replacement


   Type Designator: B4N80
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 150 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 4 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 17.3 nC
   trⓘ - Rise Time: 9.5 nS
   Cossⓘ - Output Capacitance: 48 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 4 Ohm
   Package: TO251B
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B4N80 Datasheet (PDF)

 ..1. Size:953K  cn wxdh
b4n80.pdf pdf_icon

B4N80

B4N804A 800V N-channel Enhancement Mode Power MOSFET1 DescriptionB4N80 , the silicon N-channel Enhanced VDMOSFETs, is obtained byVDSS = 800Vthe self-aligned planar Technology which reduce the conduction loss,I = 4.0ADimprove switching performance and enhance the avalanche energy. Thetransistor can be used in various power switching circuit for systemRDS(on)TYP)= 3.7

 0.1. Size:200K  motorola
mtb4n80e.pdf pdf_icon

B4N80

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTB4N80E/DDesigner's Data SheetMTB4N80ETMOS E-FET.Motorola Preferred DeviceHigh Energy Power FETD2PAK for Surface MountTMOS POWER FETNChannel EnhancementMode Silicon Gate 4.0 AMPERES800 VOLTSThe D2PAK package has the capability of housing a larger dieRDS(on) = 3.0 OHMthan any existing surface mou

 0.2. Size:160K  motorola
mtb4n80e1rev0.pdf pdf_icon

B4N80

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTB4N80E1/DProduct PreviewMTB4N80E1TMOS E-FET.Motorola Preferred DeviceHigh Energy Power FETD2PAK-SL Straight LeadTMOS POWER FETNChannel EnhancementMode Silicon Gate 4.0 AMPERES800 VOLTSThis high voltage MOSFET uses an advanced terminationRDS(on) = 3.0 OHMscheme to provide enhanced voltageblockin

 0.3. Size:195K  motorola
mtb4n80erev4.pdf pdf_icon

B4N80

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTB4N80E/DDesigner's Data SheetMTB4N80ETMOS E-FET.Motorola Preferred DeviceHigh Energy Power FETD2PAK for Surface MountTMOS POWER FETNChannel EnhancementMode Silicon Gate 4.0 AMPERES800 VOLTSThe D2PAK package has the capability of housing a larger dieRDS(on) = 3.0 OHMthan any existing surface mou

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

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