B640 Todos los transistores

 ..1. Size:1407K  cn wxdh
 640 f640 i640 e640 b640 d640.pdf

640/F640/I640/E640/B640/D640 18A 200V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhanced vdmosfets, is obtained by the 2 D V = 200V self-aligned planar technology which reduce the DSS conduction loss, improve switching performance and R = 0.12 DS(on) (TYP) G enhance the avalanche energy. Which accords with the 1 RoHS standard. I = 18A 3 S D 2 Featur

 0.1. Size:1088K  samwin
 swp640d swy640d swb640d.pdf

SW640D N-channel Enhanced mode TO-220/TO-220FT/TO-263 MOSFET TO-220 TO-220FT TO-263 BVDSS 200V Features ID 18A High ruggedness RDS(ON) 0.15 Low RDS(ON) (Typ 0.15 )@VGS=10V Low Gate Charge (Typ 38nC) 2 Improved dv/dt Capability 1 1 1 100% Avalanche Tested 2 1 2 2 3 3 3 Application LED , Adaptor 1. Gate 2. Drain 3. Sour

 0.2. Size:881K  cn hunteck
 hgb640n25s hgk640n25s hgp640n25s.pdf

, HGB640N25S HGP640N25S P-1 HGK640N25S 250V N-Ch Power MOSFET Feature 250 V VDS High Speed Power Switching TO-263 50 RDS(on),typ m Enhanced Body diode dv/dt capability TO-247 50 RDS(on),typ m Enhanced Avalanche Ruggedness TO-220 50 RDS(on),typ m 100% UIS Tested, 100% Rg Tested 35 A ID Lead Free Application Synchronous Rectification in SMPS