B640 - аналоги, параметры транзистора - Справочник транзисторов

B640 даташит

..1. Size:1407K cn wxdh
640 f640 i640 e640 b640 d640.pdf pdf_icon

640/F640/I640/E640/B640/D640 18A 200V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhanced vdmosfets, is obtained by the 2 D V = 200V self-aligned planar technology which reduce the DSS conduction loss, improve switching performance and R = 0.12 DS(on) (TYP) G enhance the avalanche energy. Which accords with the 1 RoHS standard. I = 18A 3 S D 2 Featur

0.1. Size:1088K samwin
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SW640D N-channel Enhanced mode TO-220/TO-220FT/TO-263 MOSFET TO-220 TO-220FT TO-263 BVDSS 200V Features ID 18A High ruggedness RDS(ON) 0.15 Low RDS(ON) (Typ 0.15 )@VGS=10V Low Gate Charge (Typ 38nC) 2 Improved dv/dt Capability 1 1 1 100% Avalanche Tested 2 1 2 2 3 3 3 Application LED , Adaptor 1. Gate 2. Drain 3. Sour

0.2. Size:881K cn hunteck
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, HGB640N25S HGP640N25S P-1 HGK640N25S 250V N-Ch Power MOSFET Feature 250 V VDS High Speed Power Switching TO-263 50 RDS(on),typ m Enhanced Body diode dv/dt capability TO-247 50 RDS(on),typ m Enhanced Avalanche Ruggedness TO-220 50 RDS(on),typ m 100% UIS Tested, 100% Rg Tested 35 A ID Lead Free Application Synchronous Rectification in SMPS

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