DH012N03B MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: DH012N03B
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 270 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 320 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 140 nS
Cossⓘ - Capacitancia de salida: 1266 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0018 Ohm
Encapsulados: TO220F
Búsqueda de reemplazo de DH012N03B MOSFET
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DH012N03B datasheet
dh012n03 dh012n03f dh012n03i dh012n03e dh012n03b dh012n03d.pdf
DH012N03/DH012N03F/DH012N03I/ DH012N03E/DH012N03B/DH012N03D 320A 30V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V = 30V DSS advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS G R = 1.5m DS(on) (TYP) standard. 1 3 S I = 320A D 2 Features Low on res
dh012n03p.pdf
DH012N03P 100A 30V N-channel Enhancement Mode Power MOSFET 1 Description This N-channel enhancement mode power mosfets used V = 30V DSS 2 D advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS R = 1.2m DS(on) (TYP) G standard. I Silicon limit = 256A D 1 3 S I Package limit =100A D 2 Features Low on resist
dh012n03u.pdf
DH012N03U 235A 30V N-channel Enhancement Mode Power MOSFET 1 Description This N-channel enhancement mode power mosfets used 2 D advanced trench technology design, provided excellent V =30V DSS Rdson and low gate charge. Which accords with the RoHS G R =1.15m DS(on) (TYP) standard. 1 3 S I =235A D 2 Features Low on resistance Low gate charge Fast switching
Otros transistores... DH009N02 , DH009N02B , DH009N02D , DH009N02E , DH009N02F , DH009N02I , DH009N02P , DH012N03 , IRFB4227 , D12N06 , D18N20 , D25N10 , D5N65-XAD , D630 , D640 , D740 , D7N60 .
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