DH012N03B Datasheet and Replacement
Type Designator: DH012N03B
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 270 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
|Id|ⓘ - Maximum Drain Current: 320 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 209 nC
trⓘ - Rise Time: 140 nS
Cossⓘ - Output Capacitance: 1266 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0018 Ohm
Package: TO220F
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DH012N03B Datasheet (PDF)
dh012n03 dh012n03f dh012n03i dh012n03e dh012n03b dh012n03d.pdf

DH012N03/DH012N03F/DH012N03I/DH012N03E/DH012N03B/DH012N03D320A 30V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV = 30VDSSadvanced trench technology design, provided excellentRdson and low gate charge. Which accords with the RoHSGR = 1.5mDS(on) (TYP)standard.13 SI = 320AD2 Features Low on res
dh012n03p.pdf

DH012N03P100A 30V N-channel Enhancement Mode Power MOSFET1 DescriptionThis N-channel enhancement mode power mosfets usedV = 30VDSS2 Dadvanced trench technology design, provided excellentRdson and low gate charge. Which accords with the RoHS R = 1.2mDS(on) (TYP)Gstandard.I Silicon limit= 256AD13 SI Package limit=100AD2 Features Low on resist
dh012n03u.pdf

DH012N03U235A 30V N-channel Enhancement Mode Power MOSFET1 DescriptionThis N-channel enhancement mode power mosfets used2 Dadvanced trench technology design, provided excellentV =30VDSSRdson and low gate charge. Which accords with the RoHSGR =1.15mDS(on) (TYP)standard.13 SI =235AD2 Features Low on resistance Low gate charge Fast switching
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: DH009N02B
Keywords - DH012N03B MOSFET datasheet
DH012N03B cross reference
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History: DH009N02B



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