All MOSFET. DH012N03B Datasheet

 

DH012N03B Datasheet and Replacement


   Type Designator: DH012N03B
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 270 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
   |Id|ⓘ - Maximum Drain Current: 320 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 209 nC
   trⓘ - Rise Time: 140 nS
   Cossⓘ - Output Capacitance: 1266 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0018 Ohm
   Package: TO220F
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DH012N03B Datasheet (PDF)

 ..1. Size:1133K  cn wxdh
 dh012n03 dh012n03f dh012n03i dh012n03e dh012n03b dh012n03d.pdf pdf_icon

DH012N03B

DH012N03/DH012N03F/DH012N03I/DH012N03E/DH012N03B/DH012N03D320A 30V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV = 30VDSSadvanced trench technology design, provided excellentRdson and low gate charge. Which accords with the RoHSGR = 1.5mDS(on) (TYP)standard.13 SI = 320AD2 Features Low on res

 6.1. Size:790K  cn wxdh
 dh012n03p.pdf pdf_icon

DH012N03B

DH012N03P100A 30V N-channel Enhancement Mode Power MOSFET1 DescriptionThis N-channel enhancement mode power mosfets usedV = 30VDSS2 Dadvanced trench technology design, provided excellentRdson and low gate charge. Which accords with the RoHS R = 1.2mDS(on) (TYP)Gstandard.I Silicon limit= 256AD13 SI Package limit=100AD2 Features Low on resist

 6.2. Size:888K  cn wxdh
 dh012n03u.pdf pdf_icon

DH012N03B

DH012N03U235A 30V N-channel Enhancement Mode Power MOSFET1 DescriptionThis N-channel enhancement mode power mosfets used2 Dadvanced trench technology design, provided excellentV =30VDSSRdson and low gate charge. Which accords with the RoHSGR =1.15mDS(on) (TYP)standard.13 SI =235AD2 Features Low on resistance Low gate charge Fast switching

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History: DH009N02B

Keywords - DH012N03B MOSFET datasheet

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