D120N10ZR Todos los transistores

 

D120N10ZR MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: D120N10ZR
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 227 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 120 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 117 nC
   trⓘ - Tiempo de subida: 56 nS
   Cossⓘ - Capacitancia de salida: 1026 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.004 Ohm
   Paquete / Cubierta: TO220
 

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D120N10ZR Datasheet (PDF)

 ..1. Size:1084K  cn wxdh
d120n10zr fd120n10zr id120n10zr ed120n10zr.pdf pdf_icon

D120N10ZR

D120N10ZR/FD120N10ZR/ID120N10ZR/ED120N10ZR120A100V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power MOSFETS2 DVDS = 100VUsed advanced Split Gate technology design, providedexcellent RDSON and low gate charge. Which accords withRDS = 3.3m(on) (TYP)Gthe RoHS standard.1ID = 120A3 S2 Features Low On Resistance Low

 7.1. Size:267K  semihow
hrd120n10k hru120n10k.pdf pdf_icon

D120N10ZR

Sep 2015BVDSS = 100 VRDS(on) typ = 10 HRD120N10K / HRU120N10K ID = 73 A100V N-Channel Trench MOSFETD-PAK I-PAKFEATURES21 Originative New Design13 23 Superior Avalanche Rugged TechnologyHRD120N10K HRU120N10K Excellent Switching Characteristics1.Gate 2. Drain 3. Source Unrivalled Gate Charge : 65 nC (Typ.) Extended Safe Operating Area Lower RDS(ON)

 7.2. Size:964K  cn hunteck
hgi120n10al hgd120n10al.pdf pdf_icon

D120N10ZR

,HGI120N10AL HGD120N10AL P-1100V N-Ch Power MOSFETFeature100 VVDS High Speed Power Switching, Logic Level11.4RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability15.5RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness60 AID (Silicon limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Drain Synchronous Rectific

 7.3. Size:952K  cn hunteck
hgi120n10a hgd120n10a.pdf pdf_icon

D120N10ZR

,HGI120N10A HGD120N10A P-1100V N-Ch Power MOSFETFeature100 VVDS High Speed Power Switching12.0RDS(on),typ mW Enhanced Body diode dv/dt capability59 AID Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrain Hard Switching and High Speed Circuit DC/DC in

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