D120N10ZR MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: D120N10ZR
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 227 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 120 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 VQgⓘ - Carga de la puerta: 117 nC
trⓘ - Tiempo de subida: 56 nS
Cossⓘ - Capacitancia de salida: 1026 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.004 Ohm
Paquete / Cubierta: TO220
Búsqueda de reemplazo de D120N10ZR MOSFET
D120N10ZR Datasheet (PDF)
d120n10zr fd120n10zr id120n10zr ed120n10zr.pdf

D120N10ZR/FD120N10ZR/ID120N10ZR/ED120N10ZR120A100V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power MOSFETS2 DVDS = 100VUsed advanced Split Gate technology design, providedexcellent RDSON and low gate charge. Which accords withRDS = 3.3m(on) (TYP)Gthe RoHS standard.1ID = 120A3 S2 Features Low On Resistance Low
hrd120n10k hru120n10k.pdf

Sep 2015BVDSS = 100 VRDS(on) typ = 10 HRD120N10K / HRU120N10K ID = 73 A100V N-Channel Trench MOSFETD-PAK I-PAKFEATURES21 Originative New Design13 23 Superior Avalanche Rugged TechnologyHRD120N10K HRU120N10K Excellent Switching Characteristics1.Gate 2. Drain 3. Source Unrivalled Gate Charge : 65 nC (Typ.) Extended Safe Operating Area Lower RDS(ON)
hgi120n10al hgd120n10al.pdf

,HGI120N10AL HGD120N10AL P-1100V N-Ch Power MOSFETFeature100 VVDS High Speed Power Switching, Logic Level11.4RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability15.5RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness60 AID (Silicon limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Drain Synchronous Rectific
hgi120n10a hgd120n10a.pdf

,HGI120N10A HGD120N10A P-1100V N-Ch Power MOSFETFeature100 VVDS High Speed Power Switching12.0RDS(on),typ mW Enhanced Body diode dv/dt capability59 AID Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrain Hard Switching and High Speed Circuit DC/DC in
Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .



Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: FBM85N80B | FBM85N80P | FBM80N70B | FBM80N70P | N6005D | N6005B | N6005 | IN6005 | ID120N10ZR | I80N06 | I740 | I640 | I630 | I50N06 | I25N10 | I20N50
Popular searches
2sa70 | 2sa706 | 2sc539 | 2n5401 transistor equivalent | p0903bdg | c1384 transistor | 2sc1175 | 2sc632