D120N10ZR Todos los transistores

D120N10ZR/FD120N10ZR /ID120N10ZR/ED120N10ZR 120A100V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power MOSFETS 2 D VDS = 100V Used advanced Split Gate technology design, provided excellent RDSON and low gate charge. Which accords with RDS = 3.3m (on) (TYP) G the RoHS standard. 1 ID = 120A 3 S 2 Features Low On Resistance Low

Sep 2015 BVDSS = 100 V RDS(on) typ = 10 HRD120N10K / HRU120N10K ID = 73 A 100V N-Channel Trench MOSFET D-PAK I-PAK FEATURES 2 1 Originative New Design 1 3 2 3 Superior Avalanche Rugged Technology HRD120N10K HRU120N10K Excellent Switching Characteristics 1.Gate 2. Drain 3. Source Unrivalled Gate Charge 65 nC (Typ.) Extended Safe Operating Area Lower RDS(ON)

, HGI120N10AL HGD120N10AL P-1 100V N-Ch Power MOSFET Feature 100 V VDS High Speed Power Switching, Logic Level 11.4 RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 15.5 RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness 60 A ID (Silicon limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Drain Synchronous Rectific

, HGI120N10A HGD120N10A P-1 100V N-Ch Power MOSFET Feature 100 V VDS High Speed Power Switching 12.0 RDS(on),typ mW Enhanced Body diode dv/dt capability 59 A ID Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchronous Rectification in SMPS Drain Hard Switching and High Speed Circuit DC/DC in

TSD120N10AT,TSP120N10AT,TSG120N10AT Wuxi Unigroup Microelectronics CO.,LTD. 100V N-Channel SGT MOSFET General Description Product Summary VDS 100V l Trench Power SGT technology ID (at VGS =10V) 55A l Very low on-resistance RDS(ON) RDS(ON) (at VGS =10V)