D120N10ZR Datasheet. Specs and Replacement

Type Designator: D120N10ZR  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 227 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 120 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 56 nS

Cossⓘ - Output Capacitance: 1026 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.004 Ohm

Package: TO220

  📄📄 Copy 

D120N10ZR substitution

- MOSFET ⓘ Cross-Reference Search

 

D120N10ZR datasheet

 ..1. Size:1084K  cn wxdh
 d120n10zr fd120n10zr id120n10zr ed120n10zr.pdf pdf_icon

D120N10ZR

D120N10ZR/FD120N10ZR /ID120N10ZR/ED120N10ZR 120A100V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power MOSFETS 2 D VDS = 100V Used advanced Split Gate technology design, provided excellent RDSON and low gate charge. Which accords with RDS = 3.3m (on) (TYP) G the RoHS standard. 1 ID = 120A 3 S 2 Features Low On Resistance Low... See More ⇒

 7.1. Size:267K  semihow
 hrd120n10k hru120n10k.pdf pdf_icon

D120N10ZR

Sep 2015 BVDSS = 100 V RDS(on) typ = 10 HRD120N10K / HRU120N10K ID = 73 A 100V N-Channel Trench MOSFET D-PAK I-PAK FEATURES 2 1 Originative New Design 1 3 2 3 Superior Avalanche Rugged Technology HRD120N10K HRU120N10K Excellent Switching Characteristics 1.Gate 2. Drain 3. Source Unrivalled Gate Charge 65 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) ... See More ⇒

 7.2. Size:964K  cn hunteck
 hgi120n10al hgd120n10al.pdf pdf_icon

D120N10ZR

, HGI120N10AL HGD120N10AL P-1 100V N-Ch Power MOSFET Feature 100 V VDS High Speed Power Switching, Logic Level 11.4 RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 15.5 RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness 60 A ID (Silicon limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Drain Synchronous Rectific... See More ⇒

 7.3. Size:952K  cn hunteck
 hgi120n10a hgd120n10a.pdf pdf_icon

D120N10ZR

, HGI120N10A HGD120N10A P-1 100V N-Ch Power MOSFET Feature 100 V VDS High Speed Power Switching 12.0 RDS(on),typ mW Enhanced Body diode dv/dt capability 59 A ID Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchronous Rectification in SMPS Drain Hard Switching and High Speed Circuit DC/DC in ... See More ⇒

SHOW MORE

Detailed specifications: 18P10, 18P10B, 18P10D, 18P10E, 18P10F, 18P10I, D10N70, D110N04, 13N50, CMP3006-VB, 2N3368, 2N3369, 2N3370, DH020N03F, DH020N03I, DH020N03P, DCC016M120G2

Keywords - D120N10ZR MOSFET specs

 D120N10ZR cross reference

 D120N10ZR equivalent finder

 D120N10ZR pdf lookup

 D120N10ZR substitution

 D120N10ZR replacement

Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility