FQPF8N60CF Todos los transistores

 

FQPF8N60CF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FQPF8N60CF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 48 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 6.26 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 28 nC
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.5 Ohm
   Paquete / Cubierta: TO220F
 

 Búsqueda de reemplazo de FQPF8N60CF MOSFET

   - Selección ⓘ de transistores por parámetros

 

FQPF8N60CF Datasheet (PDF)

 ..1. Size:750K  fairchild semi
 fqpf8n60cf.pdf pdf_icon

FQPF8N60CF

February 2006TMFRFETFQPF8N60CF600V N-Channel MOSFETFeatures Description 6.26A, 600V, RDS(on) = 1.5 @VGS = 10 V These N-Channel enhancement mode power field effect Low gate charge ( typical 28 nC) transistors are produced using Fairchilds proprietary, planarstripe, DMOS technology. Low Crss ( typical 12 pF)This advanced technology has been especially tailored t

 ..2. Size:1285K  onsemi
 fqpf8n60cf.pdf pdf_icon

FQPF8N60CF

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 5.1. Size:927K  fairchild semi
 fqp8n60c fqpf8n60c.pdf pdf_icon

FQPF8N60CF

QFETFQP8N60C/FQPF8N60C600V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 7.5A, 600V, RDS(on) = 1.2 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 28 nC)planar stripe, DMOS technology. Low Crss ( typical 12 pF)This advanced technology has been especially tailored to

 5.2. Size:925K  fairchild semi
 fqpf8n60ct fqpf8n60cydtu.pdf pdf_icon

FQPF8N60CF

QFETFQP8N60C/FQPF8N60C600V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 7.5A, 600V, RDS(on) = 1.2 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 28 nC)planar stripe, DMOS technology. Low Crss ( typical 12 pF)This advanced technology has been especially tailored to

MOSTRAR MÁS

Otros transistores... FDN5632NF085 , FQPF7N65C , FQPF7N80C , FDD16AN08F085 , FQPF7P20 , FQPF85N06 , FQPF8N60C , FDD24AN06LF085 , K2611 , FDMS7680 , FQPF8N80C , FQD5N15 , FQPF8N90C , FQPF9N25C , FQPF9N50CF , FQPF9N90C , FQPF9P25 .

History: IXFT15N80Q | FDR836P

 

 
Back to Top

 


 
.