FQPF8N60CF PDF and Equivalents Search

 

FQPF8N60CF Specs and Replacement

Type Designator: FQPF8N60CF

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 48 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 6.26 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm

Package: TO220F

FQPF8N60CF substitution

- MOSFET ⓘ Cross-Reference Search

 

FQPF8N60CF datasheet

 ..1. Size:750K  fairchild semi
 fqpf8n60cf.pdf pdf_icon

FQPF8N60CF

February 2006 TM FRFET FQPF8N60CF 600V N-Channel MOSFET Features Description 6.26A, 600V, RDS(on) = 1.5 @VGS = 10 V These N-Channel enhancement mode power field effect Low gate charge ( typical 28 nC) transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. Low Crss ( typical 12 pF) This advanced technology has been especially tailored t... See More ⇒

 ..2. Size:1285K  onsemi
 fqpf8n60cf.pdf pdf_icon

FQPF8N60CF

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒

 5.1. Size:927K  fairchild semi
 fqp8n60c fqpf8n60c.pdf pdf_icon

FQPF8N60CF

QFET FQP8N60C/FQPF8N60C 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 7.5A, 600V, RDS(on) = 1.2 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 28 nC) planar stripe, DMOS technology. Low Crss ( typical 12 pF) This advanced technology has been especially tailored to... See More ⇒

 5.2. Size:925K  fairchild semi
 fqpf8n60ct fqpf8n60cydtu.pdf pdf_icon

FQPF8N60CF

QFET FQP8N60C/FQPF8N60C 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 7.5A, 600V, RDS(on) = 1.2 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 28 nC) planar stripe, DMOS technology. Low Crss ( typical 12 pF) This advanced technology has been especially tailored to... See More ⇒

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Detailed specifications: FDN5632NF085 , FQPF7N65C , FQPF7N80C , FDD16AN08F085 , FQPF7P20 , FQPF85N06 , FQPF8N60C , FDD24AN06LF085 , 8N60 , FDMS7680 , FQPF8N80C , FQD5N15 , FQPF8N90C , FQPF9N25C , FQPF9N50CF , FQPF9N90C , FQPF9P25 .

Keywords - FQPF8N60CF MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 

 


 
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