FDMS7680 Todos los transistores

October 2014 FDMS7680 N-Channel PowerTrench MOSFET 30 V, 6.9 m Features General Description This N-Channel MOSFET has been designed specifically to Max rDS(on) = 6.9 m at VGS = 10 V, ID = 14 A improve the overall efficiency and to minimize switch node Max rDS(on) = 11 m at VGS = 4.5 V, ID = 11 A ringing of DC/DC converters using either synchronous or Advanced Package

July 2010 FDMS7682 N-Channel PowerTrench MOSFET 30 V, 6.3 m Features General Description Max rDS(on) = 6.3 m at VGS = 10 V, ID = 14 A This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node Max rDS(on) = 10.4 m at VGS = 4.5 V, ID = 11 A ringing of DC/DC converters using either synchronous or Advanced Package and

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

FDMS7658AS N-Channel PowerTrench SyncFETTM 30 V, 176 A, 1.9 m General Description Features The FDMS7658AS has been designed to minimize losses in power conversion application. Advancements in both silicon and Max rDS(on) = 1.9 m at VGS = 10 V, ID = 28 A package technologies have been combined to offer the lowest Max rDS(on) = 2.2 m at VGS = 7 V, ID = 26 A rDS(on) while ma

September 2009 FDMS7672AS N-Channel PowerTrench SyncFETTM 30 V, 42 A, 4 m Features General Description The FDMS7672AS has been designed to minimize losses in Max rDS(on) = 4.0 m at VGS = 10 V, ID = 18 A power conversion application. Advancements in both silicon and Max rDS(on) = 4.5 m at VGS = 7 V, ID = 16 A package technologies have been combined to offer the lowest

June 2011 FDMS7608S Dual N-Channel PowerTrench MOSFET Q1 30 V, 22 A, 10.0 m Q2 30 V, 30 A, 6.3 m Features General Description Q1 N-Channel This device includes two specialized N-Channel MOSFETs in a dual MLP package. The switch node has been internally Max rDS(on) = 10.0 m at VGS = 10 V, ID = 12 A connected to enable easy placement and routing of synchronous Max rDS(

January 2015 FDMS7678 N-Channel Power Trench MOSFET 30 V, 26 A, 5.5 m Features General Description Max rDS(on) = 5.5 m at VGS = 10 V, ID = 17.5 A This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced Power Trench process that has Max rDS(on) = 6.8 m at VGS = 4.5 V, ID = 15 A been especially tailored to minimize the on-state resistance. This High p

March 2010 FDMS7670AS N-Channel PowerTrench SyncFETTM 30 V, 42 A, 3 m Features General Description The FDMS7670AS has been designed to minimize losses in Max rDS(on) = 3.0 m at VGS = 10 V, ID = 21 A power conversion application. Advancements in both silicon and Max rDS(on) = 3.2 m at VGS = 7 V, ID = 19 A package technologies have been combined to offer the lowest Adv

April 2009 FDMS7660 N-Channel PowerTrench MOSFET 30 V, 2.8 m Features General Description This N-Channel MOSFET has been designed specifically to Max rDS(on) = 2.8 m at VGS = 10 V, ID = 25 A improve the overall efficiency and to minimize switch node Max rDS(on) = 3.5 m at VGS = 4.5 V, ID = 19 A ringing of DC/DC converters using either synchronous or conventional switc

December 2009 FDMS7600AS Dual N-Channel PowerTrench MOSFET N-Channel 30 V, 30 A, 7.5 m N-Channel 30 V, 40 A, 2.8 m Features General Description Q1 N-Channel This device includes two specialized N-Channel MOSFETs in a dual MLP package.The switch node has been internally Max rDS(on) = 7.5 m at VGS = 10 V, ID = 12 A connected to enable easy placement and routing of synch

March 2011 FDMS7620S Dual N-Channel PowerTrench MOSFET Q1 30 V, 10.1 A, 20.0 m Q2 30 V, 12.4 A, 11.2 m Features Q1 N-Channel General Description Max rDS(on) = 20.0 m at VGS = 10 V, ID = 10.1 A This device includes two specialized MOSFETs in a unique dual Max rDS(on) = 30.0 m at VGS = 4.5 V, ID = 7.5 A Power 56 package. It is designed to provide an optimal synchro- no

June 2009 FDMS7692A N-Channel PowerTrench MOSFET 30 V, 8 m Features General Description This N-Channel MOSFET has been designed specifically to Max rDS(on) = 8 m at VGS = 10 V, ID = 13 A improve the overall efficiency and to minimize switch node Max rDS(on) = 14 m at VGS = 4.5 V, ID = 10 A ringing of DC/DC converters using either synchronous or Advanced Package and S

September 2009 FDMS7660AS N-Channel PowerTrench SyncFETTM 30 V, 42 A, 2.4 m Features General Description The FDMS7660AS has been designed to minimize losses in Max rDS(on) = 2.4 m at VGS = 10 V, ID = 25 A power conversion application. Advancements in both silicon and Max rDS(on) = 2.6 m at VGS = 7 V, ID = 23 A package technologies have been combined to offer the lowest

July 2009 FDMS7676 N-Channel PowerTrench MOSFET 30 V, 5.5 m Features General Description This N-Channel MOSFET has been designed specifically to Max rDS(on) = 5.5 m at VGS = 10 V, ID = 19 A improve the overall efficiency and to minimize switch node Max rDS(on) = 7.6 m at VGS = 4.5 V, ID = 15 A ringing of DC/DC converters using either synchronous or conventional switch

April 2009 FDMS7672 N-Channel PowerTrench MOSFET 30 V, 5.0 m Features General Description This N-Channel MOSFET has been designed specifically to Max rDS(on) = 5.0 m at VGS = 10 V, ID = 19 A improve the overall efficiency and to minimize switch node Max rDS(on) = 6.9 m at VGS = 4.5 V, ID = 15 A ringing of DC/DC converters using either synchronous or conventional switc

April 2009 FDMS7670 N-Channel PowerTrench MOSFET 30 V, 3.8 m Features General Description This N-Channel MOSFET has been designed specifically to Max rDS(on) = 3.8 m at VGS = 10 V, ID = 21 A improve the overall efficiency and to minimize switch node Max rDS(on) = 5.0 m at VGS = 4.5 V, ID = 17 A ringing of DC/DC converters using either synchronous or conventional switc

May 2011 FDMS7606 Dual N-Channel PowerTrench MOSFET Q1 30 V, 12 A, 11.4 m Q2 30 V, 22 A, 11.6 m Features General Description Q1 N-Channel This device includes two specialized N-Channel MOSFETs in a dual MLP package. The switch node has been internally Max rDS(on) = 11.4 m at VGS = 10 V, ID = 11.5 A connected to enable easy placement and routing of synchronous Max rDS(

June 2009 FDMS7692 N-Channel PowerTrench MOSFET 30 V, 7.5 m Features General Description This N-Channel MOSFET has been designed specifically to Max rDS(on) = 7.5 m at VGS = 10 V, ID = 13 A improve the overall efficiency and to minimize switch node Max rDS(on) = 13 m at VGS = 4.5 V, ID = 10 A ringing of DC/DC converters using either synchronous or Advanced Package an

September 2009 FDMS7656AS N-Channel PowerTrench SyncFET 30 V, 49 A, 1.8 m Features General Description The FDMS7656AS has been designed to minimize losses in Max rDS(on) = 1.8 m at VGS = 10 V, ID = 30 A power conversion application. Advancements in both silicon and Max rDS(on) = 1.9 m at VGS = 7 V, ID = 27 A package technologies have been combined to offer the lowest

August 2010 FDMS7602S Dual N-Channel PowerTrench MOSFET Q1 30 V, 30 A, 7.5 m Q2 30 V, 30 A, 5.0 m Features General Description Q1 N-Channel This device includes two specialized N-Channel MOSFETs in a dual MLP package.The switch node has been internally Max rDS(on) = 7.5 m at VGS = 10 V, ID = 12 A connected to enable easy placement and routing of synchronous Max rDS(on

May 2011 FDMS7698 N-Channel PowerTrench MOSFET 30 V, 22 A, 10 m Features General Description Max rDS(on) = 10 m at VGS = 10 V, ID = 13.5 A This N-Channel MOSFET has been designed specifically to Max rDS(on) = 15 m at VGS = 4.5 V, ID = 11.0 A improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or Advanced Package

July 2011 FDMS7694 N-Channel PowerTrench MOSFET 30 V, 9.5 m Features General Description Max rDS(on) = 9.5 m at VGS = 10 V, ID = 13.2 A This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node Max rDS(on) = 14.5 m at VGS = 4.5 V, ID = 10.5 A ringing of DC/DC converters using either synchronous or Advanced Package

September 2009 FDMS7658AS N-Channel PowerTrench SyncFETTM 30 V, 49 A, 1.9 m Features General Description The FDMS7658AS has been designed to minimize losses in Max rDS(on) = 1.9 m at VGS = 10 V, ID = 28 A power conversion application. Advancements in both silicon and Max rDS(on) = 2.2 m at VGS = 7 V, ID = 26 A package technologies have been combined to offer the lowest

August 2009 FDMS7650 N-Channel PowerTrench MOSFET 30 V, 60 A, 0.99 m Features General Description This N-Channel MOSFET has been designed specifically to Max rDS(on) = 0.99 m at VGS = 10 V, ID = 36 A improve the overall efficiency and to minimize switch node Max rDS(on) = 1.55 m at VGS = 4.5 V, ID = 32 A ringing of DC/DC converters using either synchronous or Advance

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

FDMS7620S Dual N-Channel PowerTrench MOSFET Q1 30 V, 13 A, 20.0 m Q2 30 V, 22 A, 11.2 m Features General Description Q1 N-Channel This device includes two specialized MOSFETs in a unique dual Max rDS(on) = 20.0 m at VGS = 10 V, ID = 10.1 A Power 56 package. It is designed to provide an optimal synchro- Max rDS(on) = 30.0 m at VGS = 4.5 V, ID = 7.5 A nous buck power sta

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

FDMS7694 N-Channel PowerTrench MOSFET General Description 30 V, 9.5 m This N-Channel MOSFET has been designed specifically to Features improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or Max rDS(on) = 9.5 m at VGS = 10 V, ID = 13.2 A conventional switching PWM controllers.It has been optimized Max rDS(on) = 14.5

FDMS7658AS N-Channel PowerTrench SyncFETTM 30 V, 176 A, 1.9 m General Description Features The FDMS7658AS has been designed to minimize losses in power conversion application. Advancements in both silicon and Max rDS(on) = 1.9 m at VGS = 10 V, ID = 28 A package technologies have been combined to offer the lowest Max rDS(on) = 2.2 m at VGS = 7 V, ID = 26 A rDS(on) while ma

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur