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FDMS7680 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: FDMS7680

Тип транзистора: MOSFET

Полярность: N

Максимальная рассеиваемая мощность (Pd): 33 W

Предельно допустимое напряжение сток-исток (Uds): 30 V

Предельно допустимое напряжение затвор-исток (Ugs): 20 V

Пороговое напряжение включения Ugs(th): 3 V

Максимально допустимый постоянный ток стока (Id): 28 A

Максимальная температура канала (Tj): 150 °C

Общий заряд затвора (Qg): 28 nC

Сопротивление сток-исток открытого транзистора (Rds): 0.0069 Ohm

Тип корпуса: PQFN5X6

Аналог (замена) для FDMS7680

 

 

FDMS7680 Datasheet (PDF)

1.1. fdms7680.pdf Size:288K _fairchild_semi

FDMS7680

October 2014 FDMS7680 N-Channel PowerTrench® MOSFET 30 V, 6.9 mΩ Features General Description This N-Channel MOSFET has been designed specifically to Max rDS(on) = 6.9 mΩ at VGS = 10 V, ID = 14 A improve the overall efficiency and to minimize switch node Max rDS(on) = 11 mΩ at VGS = 4.5 V, ID = 11 A ringing of DC/DC converters using either synchronous or Advanced Package

3.1. fdms7682.pdf Size:275K _fairchild_semi

FDMS7680
FDMS7680

July 2010 FDMS7682 N-Channel PowerTrench MOSFET 30 V, 6.3 m? Features General Description Max rDS(on) = 6.3 m? at VGS = 10 V, ID = 14 A This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node Max rDS(on) = 10.4 m? at VGS = 4.5 V, ID = 11 A ringing of DC/DC converters using either synchronous or Advanced Package and Silico

 4.1. fdms7672.pdf Size:323K _fairchild_semi

FDMS7680
FDMS7680

April 2009 FDMS7672 N-Channel PowerTrench MOSFET 30 V, 5.0 m? Features General Description This N-Channel MOSFET has been designed specifically to Max rDS(on) = 5.0 m? at VGS = 10 V, ID = 19 A improve the overall efficiency and to minimize switch node Max rDS(on) = 6.9 m? at VGS = 4.5 V, ID = 15 A ringing of DC/DC converters using either synchronous or conventional switching PWM c

4.2. fdms7670.pdf Size:319K _fairchild_semi

FDMS7680
FDMS7680

April 2009 FDMS7670 N-Channel PowerTrench MOSFET 30 V, 3.8 m? Features General Description This N-Channel MOSFET has been designed specifically to Max rDS(on) = 3.8 m? at VGS = 10 V, ID = 21 A improve the overall efficiency and to minimize switch node Max rDS(on) = 5.0 m? at VGS = 4.5 V, ID = 17 A ringing of DC/DC converters using either synchronous or conventional switching PWM c

 4.3. fdms7672as.pdf Size:482K _fairchild_semi

FDMS7680
FDMS7680

September 2009 FDMS7672AS N-Channel PowerTrench SyncFETTM 30 V, 42 A, 4 m? Features General Description The FDMS7672AS has been designed to minimize losses in Max rDS(on) = 4.0 m? at VGS = 10 V, ID = 18 A power conversion application. Advancements in both silicon and Max rDS(on) = 4.5 m? at VGS = 7 V, ID = 16 A package technologies have been combined to offer the lowest Advanced

4.4. fdms7692a.pdf Size:334K _fairchild_semi

FDMS7680
FDMS7680

June 2009 FDMS7692A N-Channel PowerTrench MOSFET 30 V, 8 m? Features General Description This N-Channel MOSFET has been designed specifically to Max rDS(on) = 8 m? at VGS = 10 V, ID = 13 A improve the overall efficiency and to minimize switch node Max rDS(on) = 14 m? at VGS = 4.5 V, ID = 10 A ringing of DC/DC converters using either synchronous or Advanced Package and Silicon com

 4.5. fdms7600as.pdf Size:464K _fairchild_semi

FDMS7680
FDMS7680

December 2009 FDMS7600AS Dual N-Channel PowerTrench MOSFET N-Channel: 30 V, 30 A, 7.5 m? N-Channel: 30 V, 40 A, 2.8 m? Features General Description Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a dual MLP package.The switch node has been internally Max rDS(on) = 7.5 m? at VGS = 10 V, ID = 12 A connected to enable easy placement and routing of synchronous

4.6. fdms7692.pdf Size:334K _fairchild_semi

FDMS7680
FDMS7680

June 2009 FDMS7692 N-Channel PowerTrench MOSFET 30 V, 7.5 m? Features General Description This N-Channel MOSFET has been designed specifically to Max rDS(on) = 7.5 m? at VGS = 10 V, ID = 13 A improve the overall efficiency and to minimize switch node Max rDS(on) = 13 m? at VGS = 4.5 V, ID = 10 A ringing of DC/DC converters using either synchronous or Advanced Package and Silicon

4.7. fdms7606.pdf Size:392K _fairchild_semi

FDMS7680
FDMS7680

May 2011 FDMS7606 Dual N-Channel PowerTrench® MOSFET Q1: 30 V, 12 A, 11.4 mΩ Q2: 30 V, 22 A, 11.6 mΩ Features General Description Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a dual MLP package. The switch node has been internally Max rDS(on) = 11.4 mΩ at VGS = 10 V, ID = 11.5 A connected to enable easy placement and routing of synchronous Max rDS(

4.8. fdms7602s.pdf Size:400K _fairchild_semi

FDMS7680
FDMS7680

August 2010 FDMS7602S Dual N-Channel PowerTrench MOSFET Q1: 30 V, 30 A, 7.5 m? Q2: 30 V, 30 A, 5.0 m? Features General Description Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a dual MLP package.The switch node has been internally Max rDS(on) = 7.5 m? at VGS = 10 V, ID = 12 A connected to enable easy placement and routing of synchronous Max rDS(on) = 12

4.9. fdms7670as.pdf Size:243K _fairchild_semi

FDMS7680
FDMS7680

March 2010 FDMS7670AS N-Channel PowerTrench SyncFETTM 30 V, 42 A, 3 m? Features General Description The FDMS7670AS has been designed to minimize losses in Max rDS(on) = 3.0 m? at VGS = 10 V, ID = 21 A power conversion application. Advancements in both silicon and Max rDS(on) = 3.2 m? at VGS = 7 V, ID = 19 A package technologies have been combined to offer the lowest Advanced Pack

4.10. fdms7698.pdf Size:250K _fairchild_semi

FDMS7680
FDMS7680

May 2011 FDMS7698 N-Channel PowerTrench MOSFET 30 V, 22 A, 10 m? Features General Description Max rDS(on) = 10 m? at VGS = 10 V, ID = 13.5 A This N-Channel MOSFET has been designed specifically to Max rDS(on) = 15 m? at VGS = 4.5 V, ID = 11.0 A improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or Advanced Package and Si

4.11. fdms7694.pdf Size:269K _fairchild_semi

FDMS7680
FDMS7680

July 2011 FDMS7694 N-Channel PowerTrench MOSFET 30 V, 9.5 m? Features General Description Max rDS(on) = 9.5 m? at VGS = 10 V, ID = 13.2 A This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node Max rDS(on) = 14.5 m? at VGS = 4.5 V, ID = 10.5 A ringing of DC/DC converters using either synchronous or Advanced Package and Si

4.12. fdms7678.pdf Size:271K _fairchild_semi

FDMS7680
FDMS7680

January 2015 FDMS7678 N-Channel Power Trench® MOSFET 30 V, 26 A, 5.5 mΩ Features General Description Max rDS(on) = 5.5 mΩ at VGS = 10 V, ID = 17.5 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has Max rDS(on) = 6.8 mΩ at VGS = 4.5 V, ID = 15 A been especially tailored to minimize the on-state resistance. This High p

4.13. fdms7660as.pdf Size:477K _fairchild_semi

FDMS7680
FDMS7680

September 2009 FDMS7660AS N-Channel PowerTrench SyncFETTM 30 V, 42 A, 2.4 m? Features General Description The FDMS7660AS has been designed to minimize losses in Max rDS(on) = 2.4 m? at VGS = 10 V, ID = 25 A power conversion application. Advancements in both silicon and Max rDS(on) = 2.6 m? at VGS = 7 V, ID = 23 A package technologies have been combined to offer the lowest Advance

4.14. fdms7656as.pdf Size:305K _fairchild_semi

FDMS7680
FDMS7680

September 2009 FDMS7656AS N-Channel PowerTrench SyncFET 30 V, 49 A, 1.8 m? Features General Description The FDMS7656AS has been designed to minimize losses in Max rDS(on) = 1.8 m? at VGS = 10 V, ID = 30 A power conversion application. Advancements in both silicon and Max rDS(on) = 1.9 m? at VGS = 7 V, ID = 27 A package technologies have been combined to offer the lowest Advanced

4.15. fdms7658as.pdf Size:470K _fairchild_semi

FDMS7680
FDMS7680

September 2009 FDMS7658AS N-Channel PowerTrench SyncFETTM 30 V, 49 A, 1.9 m? Features General Description The FDMS7658AS has been designed to minimize losses in Max rDS(on) = 1.9 m? at VGS = 10 V, ID = 28 A power conversion application. Advancements in both silicon and Max rDS(on) = 2.2 m? at VGS = 7 V, ID = 26 A package technologies have been combined to offer the lowest Advance

4.16. fdms7608s.pdf Size:399K _fairchild_semi

FDMS7680
FDMS7680

June 2011 FDMS7608S Dual N-Channel PowerTrench® MOSFET Q1: 30 V, 22 A, 10.0 mΩ Q2: 30 V, 30 A, 6.3 mΩ Features General Description Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a dual MLP package. The switch node has been internally Max rDS(on) = 10.0 mΩ at VGS = 10 V, ID = 12 A connected to enable easy placement and routing of synchronous Max rDS(

4.17. fdms7660.pdf Size:290K _fairchild_semi

FDMS7680
FDMS7680

April 2009 FDMS7660 N-Channel PowerTrench MOSFET 30 V, 2.8 m? Features General Description This N-Channel MOSFET has been designed specifically to Max rDS(on) = 2.8 m? at VGS = 10 V, ID = 25 A improve the overall efficiency and to minimize switch node Max rDS(on) = 3.5 m? at VGS = 4.5 V, ID = 19 A ringing of DC/DC converters using either synchronous or conventional switching PWM c

4.18. fdms7650.pdf Size:285K _fairchild_semi

FDMS7680
FDMS7680

August 2009 FDMS7650 N-Channel PowerTrench MOSFET 30 V, 60 A, 0.99 m? Features General Description This N-Channel MOSFET has been designed specifically to Max rDS(on) = 0.99 m? at VGS = 10 V, ID = 36 A improve the overall efficiency and to minimize switch node Max rDS(on) = 1.55 m? at VGS = 4.5 V, ID = 32 A ringing of DC/DC converters using either synchronous or Advanced Package

4.19. fdms7620s.pdf Size:359K _fairchild_semi

FDMS7680
FDMS7680

March 2011 FDMS7620S Dual N-Channel PowerTrench MOSFET Q1: 30 V, 10.1 A, 20.0 m? Q2: 30 V, 12.4 A, 11.2 m? Features Q1: N-Channel General Description Max rDS(on) = 20.0 m? at VGS = 10 V, ID = 10.1 A This device includes two specialized MOSFETs in a unique dual Max rDS(on) = 30.0 m? at VGS = 4.5 V, ID = 7.5 A Power 56 package. It is designed to provide an optimal synchro- nous buck

4.20. fdms7676.pdf Size:251K _fairchild_semi

FDMS7680
FDMS7680

July 2009 FDMS7676 N-Channel PowerTrench MOSFET 30 V, 5.5 m? Features General Description This N-Channel MOSFET has been designed specifically to Max rDS(on) = 5.5 m? at VGS = 10 V, ID = 19 A improve the overall efficiency and to minimize switch node Max rDS(on) = 7.6 m? at VGS = 4.5 V, ID = 15 A ringing of DC/DC converters using either synchronous or conventional switching PWM co

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